Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.

Design of Latches and Flip-Flops Using Emerging Tunneling Devices.

Tunnel Field-Effect Transistor: Impact of the Asymmetric and Symmetric Ambipolarity on Fault and Performance in Digital Circuits

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process

An Ultra-Low-Voltage Energy-Efficient Dynamic Fully-Regenerative Latch-Based Level-Shifter Circuit with Tunnel-FET & FinFET Devices

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

Tunneling towards efficiency: A survey of design and optimization strategies for tunnel FETs in ultra-low power applications

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

High performance tunnel field-effect transistor by gate and source engineering.

Designing of Tunnel FET and FinFET using Sentaurus TCAD and Finding their Characteristics

Design of Digital Standard Cell Based on Silicon Tunnel Field-Effect Transistor

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.

Novel Memristor-based Nonvolatile D Latch and Flip-flop Designs

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

A Low-Voltage Low-Power LC Oscillator Using the Diode-Connected SymFET

Implementation of a Boolean function with a double-gate vertical TFET (DGVTFET) using numerical simulations

Novel Silicon-Based Tunneling FET with Junction Engineering and Gate Configuration for Low Power Applications (Invited)

Low-Voltage Tunnel Transistors for Beyond CMOS Logic