Abstract:With an increase in consumer needs,resonator functions need to be optimized and extended without an increase in their sizes. A typical approach to realize this is to integrate micro-electro-mechanical system(MEMS)reso-nators with integrated circuits(ICs). Transistors driven by resonators exhibit outstanding performance. Previously studied devices are based on surface acoustic wave(SAW)resonators,which have a low frequency,large size,and fail to be monolithically integrated with transistors. To overcome such disadvantages,a graphene field effect transis-tor(FET)driven by a MEMS lamb wave resonator(LWR)is proposed in this paper. Owing to the acousto-electric(AE) effect,the acoustic waves generated by the resonator transport the carriers in graphene,which results in a current. The AE current can be detected by a pair of electrodes and tuned by gate voltage. Through the finite element method(FEM),we predict the performance of the resonator. There exist the following three modes:A0,S0,and S1. The measured performance of the fabricated device agrees well with the results of simulation. The three modes each succeeded in exciting an AE current,and 2.9 GHz(S1 mode)was the highest frequency that could induce an AE current. Focusing on the S0 mode,the AE current increased with an increase in radio frequency power. Because of limited power handling,the current exhibited nonlinearity with respect to the input RF power. The gate voltage can tune the mobility and the conductivity in grapheme;thus,it can tune the AE current. The LWR-driven graphene FET has a higher frequency and smaller size and demonstrates a novel way for integration of microchips.

A Low-Voltage Low-Power LC Oscillator Using the Diode-Connected SymFET

A LOW POWER, LOW PHASE NOISE FBAR OSCILLATOR

An Ultra-Low-Voltage High-Performance VCO in 0.13 μm CMOS

Design of Latches and Flip-Flops Using Emerging Tunneling Devices.

SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor

Dirac-source Diode with Sub-Unity Ideality Factor

Analysis and Suppression for Gate Oscillation Caused by Body Diodes on Paralleled SiC MOSFETs Application

A 0.5~0.7 V LC Digitally Controlled Oscillator Based on a Multi-Stage Capacitance Shrinking Technique

Circuit Level Implementation of Negative Capacitance Source Pocket Double Gate Tunnel FET for Low Power Applications

A low-voltage low-phase-noise bottom-series LC QVCO using capacitor tapping technique

A design of low power multi-GHz LC VCO

Analysis of a Graphene FET-Based Frequency Doubler for Combined Sensing and Modulation through Compact Model Simulation

Design of High-Q Millimeter-Wave Oscillator by Differential Transmission Line Loaded with Metamaterial Resonator in 65-Nm CMOS

A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance

Device Circuit Co Design Of Fefet Based Logic For Low Voltage Processors

A 0.73 Mw Low Power 9.6 GHz LC Voltage-Controlled Oscillator Achieves Constant KVCO and −189.2 FOM

A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

A Low Noise, Low Power Fully Digitally Controlled LC Oscillator for PHS Transceivers

A novel recessed-source negative capacitance gate-all-around tunneling field effect transistor for low-power applications

A Graphene Field Effect Transistor Driven by a MEMS Lamb Wave Resonator

A 4.8GHz CMOS fully-integrated LC balanced oscillator with symmetry noise filtering technique