Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor

Tunneling in Graphene SymFETs

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Perspectives Of Graphene Symfets For Thz Applications

Systhesis and Devices of Graphene

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Equivalent Circuit Modeling of a Dual-Gate Graphene FET

An efficient GFET structure

A Low-Voltage Low-Power LC Oscillator Using the Diode-Connected SymFET

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

Recent Development in Analytical Model for Graphene Field Effect Transistors for RF Circuit Applications

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

N‐type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction

A Comprehensive Graphene FET Model for Circuit Design

A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications

An efficient model algorithm for two-dimensional field-effect transistors

A current-voltage model for Schottky-barrier graphene based transistors

A dual gate material tunnel field effect transistor model incorporating two‐dimensional Poisson and Schrodinger wave equations

Performance Characterization and Analytical Modelling of Electrostatic Doped Heterostructure Nanotube Tunnel Field Effect Transistor

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions