Abstract:The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover, existing technology is insufficient for implementing terahertz detectors and receivers, which are required for a number of applications including medical imaging and security scanning. Graphene is considered to be a key potential candidate for replacing silicon in existing CMOS technology as well as realizing field effect transistors for terahertz detection, due to its remarkable electronic properties, with observed electronic mobilities reaching up to $2 \times 10^5$ cm$^2$ V$^{-1}$ s$^{-1}$ in suspended graphene samples. This report reviews the physics and electronic properties of graphene in the context of graphene transistor implementations. Common techniques used to synthesize graphene, such as mechanical exfoliation, chemical vapor deposition, and epitaxial growth are reviewed and compared. One of the challenges associated with realizing graphene transistors is that graphene is semimetallic, with a zero bandgap, which is troublesome in the context of digital electronics applications. Thus, the report also reviews different ways of opening a bandgap in graphene by using bilayer graphene and graphene nanoribbons. The basic operation of a conventional field effect transistor is explained and key figures of merit used in the literature are extracted. Finally, a review of some examples of state-of-the-art graphene field effect transistors is presented, with particular focus on monolayer graphene, bilayer graphene, and graphene nanoribbons.

Perspectives Of Graphene Symfets For Thz Applications

Highly Sensitive and Wide-Band Tunable Terahertz Response of Plasma Waves Based on Graphene Field Effect Transistors

Graphene-based nonvolatile terahertz switch with asymmetric electrodes

Graphene Terahertz Devices for Sensing and Communication

SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor

Graphene nanoelectromechanical resonators for detection of modulated terahertz radiation

Intrinsic photo-conductance triggered by the plasmonic effect in graphene for terahertz detection

THz detection with epitaxial graphene field effect transistors on silicon carbide

A Graphene Base Transistor for Potential Terahertz Application

Graphene Field Effect Transistors: A Review

Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors

Graphene Plasmonic THz Detectors

Towards sensitive terahertz detection via thermoelectric manipulation using graphene transistors

Graphene-based devices in terahertz science and technology

Graphene Hypersurface for Manipulation of THz Waves

Graphene Technology for RF and THz Applications

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$_x$P$_{1-x}$ gate layer

Application of Graphene within Optoelectronic Devices and Transistors

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

Resonant Terahertz Detection Using Graphene Plasmons

Tunnel field-effect transistors for sensitive terahertz detection