Abstract:For manufacturing of several high performance electronic devices, e.g. insulated-gate bipolar transistors (IGBT), single crystalline silicon crystals with high purity and minimum oxygen (in the range of 1015 at/cm3) concentration are required. Such silicon crystals are typically grown by the Floating Zone technique (Fz), as the more common and cheaper Czochralski technique (Cz) uses silica crucible, which leads always to a relatively high oxygen concentration in the silicon crystals (>1017 at/cm−3). Therefore, in this work potential materials were evaluated with respect to the development of a novel oxygen-free crucible system, which should enable a cost effective growth of oxygen free Cz silicon ingots. For that purpose different graphite materials as well as nitride bonded silicon nitride (NSN) were tested in contact with liquid silicon due to their infiltration behaviour and occurrence of crack formation. Functional silicon nitride (Si3N4) coatings were applied by powder based spray coating of reaction bonded silicon nitride (RBSN) and chemical vapour deposition (CVD) on graphite and NSN crucibles. Characterization of the crucible/coating systems before and after crystal growth experiments in a lab-scale casting furnace reveal information about morphology, infiltration behaviour and adhesion strength on the crucible. Further, investigations on the grown silicon crystals give information about impurity incorporation coming from the novel crucible systems. The results indicated, that especially graphite materials with low porosity and a high mechanical strength as well as NSN with polysilazane sealing in combination with a CVD Si3N4 coating have definitely a potential for application as crucible system in silicon growth processes.

Si 3 N 4 /fused quartz composite crucible with enhanced thermal conductivity for multicrystalline silicon ingot growth

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Optimization of Microstructure to Improve Si3n4 Ceramics with Thermal Conductivity and Mechanical Properties: Effect of Si and Α-Si3n4 Powder Composition

Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals

Inhibiting crystallization of fused silica ceramic at high temperature with addition of α-Si3N4

Effect of Silicon Nitride Coated Carbon Crucible on Multi-Crystalline Silicon Ingot during Directional Solidification Process: Numerical Simulation

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Numerical and experimental investigation of octagonal thermal field for improving multi-crystalline silicon ingot quality

Long-Term Stability of Novel Crucible Systems for the Growth of Oxygen-Free Czochralski Silicon Crystals

Higher quality composite silicon ingot with monocrystalline and multicrystalline bricks

Investigation of Impurities Distribution on the mc-Si Ingot Grown by the Silicon Nitride Coated Carbon Crucible: Numerical Simulation

Numerical and experimental investigation on iron contamination of 200 mm semiconductor-grade CZ-Si by bubble-free layer of quartz crucible

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Control of the Gas Flow in an Industrial Directional Solidification Furnace for Production of High Purity Multicrystalline Silicon Ingots

Fluoride doped SiC/Si3N4 composite as a high thermal conductive material with enhanced mechanical properties

Improving quality of cast monocrystalline Si ingot with seed crystal strips and graphite soft felt

In‐situ combustion synthesis of spherical Si@Si3N4 granules

Thermal system design and optimization of an industrial silicon directional solidification system

Multicrystalline Silicon Assisted by Polycrystalline Silicon Slabs As Seeds

Effects of impurity barrier layer on the red zone at the bottom of cast monocrystalline Si ingot for solar cells

Numerical Investigation of Bottom Grille for Improving Large-Size Silicon Quality in Directional Solidification Process