Abstract:The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing long-term mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the nonuniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a nonuniform degradation phenomenon, which affects both the performance and the reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the subchannel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with the lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.

Probing Drain Current with Vertical and Horizontal Electrical Fields under Temperature Stress on Clc Tfts

Surface-Channel Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs

Effects of Longitudinal Grain Boundaries on the Performance of MILC-TFTs

Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs

Surface Channel Hot-Carrier Effect on CLC N-Tfts

Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon N-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers

Electrothermal Characterization of TFTs under the Impact of an EMP

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Instability Effect on CLC nTFTs with Positive-Bias Temperature Stress

Enhanced Drain Current Ripple Variation with Vertical and Horizontal Electrical Fields under Optical Illumination

Visible Light Source Disturbing the Source/Drain Current of CLC Poly-Si N-Tft Device

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Gate-to-drain Capacitance Verifying the Continuous-Wave Green Laser Crystallization N-Tft Trapped Charges Distribution under Dc Voltage Stress

Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Thermal Stress Probing the Channel-Length Modulation Effect of Nano N-Type FinFETs.

Effects of Laser Activation on Device Behaviour for Poly-Si Thin-Film Transistors with Different Channel Lengths

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced With Different Excimer Laser Annealing Energies

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Abnormal ${C}$ – ${V}$ Hump Effect Induced by Hot Carriers in Gate Length-Dependent P-Type LTPS TFTs

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.