Abstract:A comprehensive quantum transport study of ultrathin-body silicon double-gate pMOSFETs with gate length <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {14}$ </tex-math></inline-formula>, 10, and 7 nm is performed by in-house developed nonequilibrium Green’s function solver employing the six-band <inline-formula> <tex-math notation="LaTeX">${k} \cdot {p}$ </tex-math></inline-formula> Hamiltonian. The effects of channel length, body thickness, as well as confinement and transport crystal orientations are studied systematically. Both <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> characteristics are analyzed in this paper. Furthermore, the CMOS performance benchmarking results, such as switching delay, energy consumption, and their product, are calculated with the influence of parasitic resistances and capacitances treated in an appropriate way. It is found that the crystal orientation effect on drive current is significant at both long and short channel lengths, while its effect on effective capacitance is more observable at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm. The drive current at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {14}$ </tex-math></inline-formula> nm and <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm can be well explained by average ballistic hole velocity and source-to-drain tunneling ratio, respectively. Meanwhile, the effective capacitance is not only determined by the density of states but also affected by the distribution of holes in the confined direction. Both intrinsic and extrinsic performance assessments suggest that (001)/[100] and (110)/[001] are the optimal confinement/transport crystal orientation configurations at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {7}$ </tex-math></inline-formula> nm, while <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110}{)}/[\overline {1}\textsf {10}]$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110})/[\overline {1}\textsf {11}]$ </tex-math></inline-formula> are the best choices at longer gate lengths. As <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}$ </tex-math></inline-formula> shrinks, both intrinsic and extrinsic performances will be better at a scaled body thickness.

Effects of Laser Activation on Device Behaviour for Poly-Si Thin-Film Transistors with Different Channel Lengths

Effects of Source/Drain Activation on Channel-Length for Excimer-Laser-Crystallized Poly-Si Thin-Film Transistors

Effects of Longitudinal Grain Boundaries on the Performance of MILC-TFTs

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

Quantum Transport Study of Si Ultrathin-Body Double-Gate Pmosfets: ${I}$ – ${V}$ , ${C}$ – ${V}$ , Energy Delay, and Parasitic Effects

Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon N-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers

Short Channel Effects in Regioregular Poly(Thiophene) Thin Film Transistors

Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors with Stable Solid-State Continuous-Wave Laser Crystallization

Temperature Dependences of Threshold Voltage and Drain-Induced Barrier Lowering in 60nm Gate Length MOS Transistors

Surface-Channel Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs

Probing Drain Current with Vertical and Horizontal Electrical Fields under Temperature Stress on Clc Tfts

Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Surface Channel Hot-Carrier Effect on CLC N-Tfts

Effect of active layer thickness on device performance of a-LZTO thin-film transistors

Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash

Fabrication of High Performance Low-Temperature Poly-Si Thin-Film Transistors Using A Modulated Process

Effect of source–drain contact and channel length on the performance of vertical thin-film transistors

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance