Abstract:The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing long-term mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the nonuniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a nonuniform degradation phenomenon, which affects both the performance and the reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the subchannel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with the lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.

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Low Temperature Poly-Si TFT Technology

Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon N-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers

Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Low Thermal Budget Poly-Si Thin Film Transistors on Glass

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Performance Improvement of Excimer Laser Annealed Poly-Si TFTs Using Fluorine Ion Implantation

Pulsed Excimer Laser Crystallization and Doping for the Fabrication of Poly-Si and -SiGe TFTs

High Performance Transparent In-Plane Silicon Nanowire Fin-Tfts Via A Robust Nano-Droplet-Scanning Crystallization Dynamics

The influence of temperature on dynamic gate-bias stress instability in amorphous silicon thin film transistors

Effect Of Active Layer Deposition Temperature On The Performance Of Sputtered Amorphous In-Ga-Zn-O Thin Film Transistors

Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films

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Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs

Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control