Abstract:The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization is a possible way in increasing the mobility value up to 450 cm2/V·sec. However, the electrical characteristics for them face the identical trend with temperature heating is degraded. However, the degradation of a-Si:H TFT is worse than that of poly-Si TFT when the device temperature is raised. In this study, the a-Si:H TFTs and poly-Si TFTs with furnace and green laser anneal were chosen. Comparing the transfer characteristics, subthreshold swing (S.S.), threshold voltage (Vth), ON/OFF ratio, field effect mobility (μFE), interface state density (Nit) with temperature effect, some trends are very interesting. The bulk traps were recovered by pseudo-crystallization with increasing temperature, and the transfer characteristics become better than the initial.

Visible Light Source Disturbing the Source/Drain Current of CLC Poly-Si N-Tft Device

Enhanced Drain Current Ripple Variation with Vertical and Horizontal Electrical Fields under Optical Illumination

Surface-Channel Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs

Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs

Probing Drain Current with Vertical and Horizontal Electrical Fields under Temperature Stress on Clc Tfts

Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon N-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers

Surface Channel Hot-Carrier Effect on CLC N-Tfts

Instability Effect on CLC nTFTs with Positive-Bias Temperature Stress

Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors with Stable Solid-State Continuous-Wave Laser Crystallization

Abnormal Threshold Voltage Shifts in P-Channel Low Temperature Polycrystalline Silicon TFTs under Deep UV Irradiation

Effects of Ultraviolet Light on the Dual-Sweep $I$ – $V$ Curve of A-Ingazno 4 Thin-Film Transistor

Performance evaluation of polycrystalline Si1−xGex thin-film transistors fabricated by continuous-wave laser lateral crystallization on glass substrates

Abnormal ${C}$ – ${V}$ Hump Effect Induced by Hot Carriers in Gate Length-Dependent P-Type LTPS TFTs

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

Gate-to-drain Capacitance Verifying the Continuous-Wave Green Laser Crystallization N-Tft Trapped Charges Distribution under Dc Voltage Stress

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Hydrogenated N-Channel Low Temperature Polycrystalline Silicon TFTs As Ultraviolet Dosimeters

Vertical Electric Field-Induced Abnormal Capacitance–Voltage Electrical Characteristics in a-InGaZnO TFTs

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Suppressing Drain-Induced Barrier Lowering and Kink Effect in Low-Temperature Poly-Si TFTs Using a Partitioned Light Shield

Effects of Laser Activation on Device Behaviour for Poly-Si Thin-Film Transistors with Different Channel Lengths