Abstract:Inorganic mini-LEDs (mLEDs) and micro-LEDs (μLEDs) have ultrahigh luminance and long lifetimes, and are challenging liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays for next-generation displays. Backplane thin-film transistors (TFTs) for mLED/μLED displays with high mobility and large driving current are under development as currently widely used backplane active materials such as crystalline silicon (CMOS Si), amorphous silicon (a-Si), low-temperature polycrystalline silicon (LTPS), and metal oxides are facing difficulties to meet the requirements. Semiconducting carbon nanotubes (s-CNTs) have long been considered as promising materials for TFTs because of their unique electronic properties. However, TFTs based on s-CNT random networks show inadequate performance due to large amounts of inter-tube junctions. Here, we report high performance TFTs based on wafer-scale, high-density aligned s-CNT array (A-CNT) for mLED/μLED driving backplanes. These A-CNT TFTs with micrometer scale channel length were fabricated using standard semiconductor manufacturing process, and exhibited mobility as high as 160 cm 2 /Vs and driving current as large as 417 μA/μm at operation voltage of ∼3 V, exceeding commercially available TFTs with similar device sizes. In addition, these A-CNT TFTs have demonstrated good driving capability for commercial mLEDs in a one-transistor-one-diode (1T1D) pixel circuit configuration, and been capable of driving commercially available mLED/μLED displays. Moreover, a prototype display with 2 × 2 mLED array have been demonstrated with full control of each pixel, manifesting the great potential for A-CNT TFT technology for backplane of mLED/μLED displays.

Integrated 2T1C pixel circuit with a-Si TFT and NMOS for active matrix mini-LED displays

A New Pixel Circuit for Active Matrix Mini&Micro Light Emitting Diodes

High-performance thin-film transistors based on aligned carbon nanotubes for mini- and micro-LED displays

A New Pixel Circuit for Micro-Light Emitting Diode Displays with Pulse Hybrid Modulation Driving and Compensation

2.3: High Mobility Top‐Gate Self‐Aligned and BCE a‐IGTO TFTs Application to Micro‐LED and Mini‐LED Display

P‐9: Student Poster: Two‐Mode PWM Driven Micro‐LED Displays with Dual‐Gate Metal‐Oxide TFTs

35‐4: Carbon Nanotube Thin‐Film Transistors for Active‐Matrix Micro‐LED Display – Device Performances, Bias Stress Stability and Compact Modeling

A New Analog PWM Pixel Circuit with Metal Oxide TFTs for Micro-LED Displays

P‐10: Emit Signals Reused Gate Driver Design for Ultra‐Narrow‐Bezel Micro‐LED Display Based on Metal‐Oxide TFTs

New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays

An Active Matrix Mini‐LEDs Backlight Based on A‐si

Reducing Power Consumption of Active-Matrix Mini-LED Backlit LCDs by Driving Circuit

A new gate driver employing linearly sweep signal generated module for high‐resolution micro‐LED display with line‐by‐line pulse width modulation driving method

A Fully-Integrated Micro-Display System With Hybrid Voltage Regulator

High Performance A-PWM Μled Pixel Circuit Design Using Double Gate Oxide TFTs

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

38.2: An Accurate and Stable PWM Pixel Circuit Based on LTPO TFTs for AM‐Micro‐LED Display

MoS2-Thin Film Transistor Based Flexible 2T1C Driving Circuits for Active-Matrix Displays.

Research on monolithic integrated driver of Micro LED

17.1: SRAM‐based LED CMOS driver circuit for a 512x512 GaN microdisplay