Abstract:The proposed μLED pixel circuit utilizes IGZO/Te CFETs, which exhibits symmetrical ambipolar behavior. The IGZO/Te heterostructure is confirmed to consist of an amorphous IGZO layer and a hexagonal Te layer using HR‐TEM and GIXRD. The circuit, based on PWM, achieved 8‐bit gray level control and stable μLED luminance, confirming its suitability for high‐quality μLED displays. This study investigates a micro light‐emitting diode (μLED) pixel circuit using the heterogeneous integration of complementary field‐effect transistors (CFETs). The CFETs are fabricated using a semiconductor layer composed of tellurium (Te) and indium‐gallium‐zinc oxide (IGZO) layers. Te and IGZO layers in the heterostructure IGZO/Te film exhibit hexagonal and amorphous phases, respectively, indicating that each layer maintains independent material characteristics. The fabricated IGZO/Te CFETs exhibit ambipolar behavior with a turn‐on voltage of 2.0 V and field‐effect mobility of 0.74 and 1.42 cm2 V−1 s−1 for p‐type and n‐type channels, respectively. Inverters comprising IGZO/Te CFET and IGZO TFT exhibit inverting behavior. A μLED pixel circuit is designed using IGZO/Te CFETs based on pulse width modulation (PWM). The proposed circuit uses an inverter structure with IGZO/Te and IGZO to control the emission time, suppressing the wavelength shift of μLEDs depending on the μLED current levels. The operation of the proposed pixel circuit is investigated through simulation and measurement of the fabricated circuit. The fabricated μLED pixel circuit successfully exhibits PWM operation, controlling the emission time and luminance. Consequently, IGZO/Te CFETs show promise as devices for high‐quality μLED displays.

P‐9: Student Poster: Two‐Mode PWM Driven Micro‐LED Displays with Dual‐Gate Metal‐Oxide TFTs

38.2: An Accurate and Stable PWM Pixel Circuit Based on LTPO TFTs for AM‐Micro‐LED Display

High Performance A-PWM Μled Pixel Circuit Design Using Double Gate Oxide TFTs

P‐9: LTPO TFTs Based PWM Pixel Circuit for AM‐Micro‐LED Display with Falling‐time <10μs

A new gate driver employing linearly sweep signal generated module for high‐resolution micro‐LED display with line‐by‐line pulse width modulation driving method

A New Pixel Circuit for Micro-Light Emitting Diode Displays with Pulse Hybrid Modulation Driving and Compensation

P‐23: Low Power A‐PWM Μled Pixel Circuit of Progressive‐mode Using Single Sweep Signal for Mobile Displays

P‐10: Emit Signals Reused Gate Driver Design for Ultra‐Narrow‐Bezel Micro‐LED Display Based on Metal‐Oxide TFTs

38.3: Compact Gate Driver on Array for Progressive‐mode PWM Micro‐LED Display using LTPS TFTs

P‐6.17: Design of Compact A‐PWM Gate Driver Based on LTPS TFTs for Progressive‐Mode Μled Displays

Integrated 2T1C pixel circuit with a-Si TFT and NMOS for active matrix mini-LED displays

A High 6318-PPI Pixel Circuit That Realizes 10-bit Gray Levels for Analog-PWM Driven Micro-LED Displays

Heterogeneous Integration of Complementary Field‐Effect Transistors for High‐Performance Micro LED Displays

61‐4: A New Pixel Circuit Based on LTPO Backplane Technology for Micro‐LED Display Using PWM Method

A New Pixel Circuit for Active Matrix Mini&Micro Light Emitting Diodes

P‐4: ΔVTH and VSS IR Rise Compensable PAM and PWM Combined Oxide TFTs Mini‐LED Pixel Circuit Working at Low Voltage

61‐2: A Novel Micro‐LED Pixel Circuit Using n‐type LTPS TFT with Pulse Width Modulation Driving

Improvement of the low gray-level expression using hybrid pulse width modulation and pulse amplitude modulation driving method for a micro light-emitting diode pixel circuit

A novel compensation pixel circuit for high bits of AM mini/micro-LED based on PWM method

Intercross scanning control with double driver for micro-LED display

A compensation pixel circuit with high bits using PWM method for AMLED