Abstract:With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of −3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V−1s−1, and sub-threshold swing of 0.38 V dec−1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film Transistors

Improvement in Instability of Transparent ALD ZnO TFTs under Negative Bias Illumination Stress with SiO/AlO Bilayer Dielectric

Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

The Effect Of Asymmetrical Electrode Form After Negative Bias Illuminated Stress In Amorphous Igzo Thin Film Transistors (Vol 110, 103502, 2017)

Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors

The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress