Abstract:In this study, the oxygen flow rate (OFR) dependence of negative bias illumination stress (NBIS) and positive bias stress (PBS) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices was investigated. Unlike in previous studies, our study simultaneously considered and analyzed the bias stress-induced degradation mechanisms by charge trapping and defect creation. NBIS and PBS instability were measured according to the OFR splits of bottom-gate (BG) IGZO TFTs and the behavior of full subgap range density of states (DOS) was experimentally tracked with especial emphasis on deep-level oxygen vacancy (${V}_{\text {O}}$ ) peak. It was found that the observed DOS variation was consistent with the ${V}_{\text {O}}$ ionization model during NBIS. In addition, the threshold voltage shift by charge trapping (${\Delta } {V}_{\text {T,CT}}$ ) and the threshold voltage shift by defect creation, i.e., change of DOS, (${\Delta } {V}_{\text {T,DOS}}$ ) were separated and extracted through the subthreshold slope decomposition method. After NBIS, the threshold voltage shift (${\Delta } {V}_{\text {T}}$ ) was composed of a component by charge trapping and a component with the ionization of ${V}_{\text {O}}$ . After PBS, ${\Delta } {V}_{\text {T}}$ was dominated by a component arising due to charge trapping. Fitting through the stretched exponential function (SEF) was performed for each separately extracted ${\Delta } {V}_{\text {T}}$ , and the activation energy for each ${\Delta } {V}_{\text {T}}$ was extracted using the inverse Laplace transform method through the extracted ${\Delta } {V}_{\text {T0}}$ , $\tau $ , and $\beta $ . Activation energy by charge trapping and DOS was extracted from NBIS and PBS, respectively. As a result of simultaneously considering the two degradation mechanisms, the extracted activation energy was located between the previous values. Experimentally extracted sets of DOS-specific parameters before and after bias stress were applied to technology computer-aided design (TCAD) simulations. Accurate reproduction of TFT current–voltage (${I}$ –${V}$ ) curves before and after bias stress and recovery suggests that the methodology and parameter set used in this study are reasonable and potentially useful for a more robust and systematic analysis of the bias stress-induced instability in a-IGZO BG TFTs.

The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design

Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Effect of Bandgap Widening on Negative-Bias Illumination Stress Stability of Oxide Thin-Film Transistors

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Improvement in Instability of Transparent ALD ZnO TFTs under Negative Bias Illumination Stress with SiO/AlO Bilayer Dielectric

Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

The Effect Of Asymmetrical Electrode Form After Negative Bias Illuminated Stress In Amorphous Igzo Thin Film Transistors (Vol 110, 103502, 2017)

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination

Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration

Two-step Degradation of A-Ingazno Thin Film Transistors under DC Bias Stress

Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress

Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of A‐igzo TFTs

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors