Abstract:The micro-bolometer is important in the field of infrared imaging, although improvements in its performance have been limited by traditional materials. SiGe/Si multi-quantum-well materials (SiGe/Si MQWs) are novelty thermal-sensitive materials with a significantly high TCR and a comparably low 1/f noise. The application of such high-performance monocrystalline films in a micro-bolometer has been limited by film integration technology. This paper reports a SiGe/Si MQWs micro-bolometer fabrication with heterogeneous integration. The integration with the SiGe/Si MQWs handle wafer and dummy read-out circuit wafer was achieved based on adhesive wafer bonding. The SiGe/Si MQWs infrared-absorption structure and thermal bridge were calculated and designed. The SiGe/Si MQWs wafer and a 320 × 240 micro-bolometer array of 40 μm pitch L-type pixels were fabricated. The test results for the average absorption efficiency were more than 90% at the wavelength of 8–14 μm. The test pixel was measured to have a thermal capacity of 1.043 × 10−9 J/K, a thermal conductivity of 1.645 × 10−7 W/K, and a thermal time constant of 7.25 ms. Furthermore, the total TCR value of the text pixel was measured as 2.91%/K with a bias voltage of 0.3 V. The SiGe/Si MQWs micro-bolometer can be widely applied in commercial fields, especially in early medical diagnosis and biological detection.

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Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

Novel Micromachined Uncooled Infrared Detector Employing A-Si:H TFT As Thermosensitive Element

Optimization Design of Uncooled Amorphous Silicon Thin Film Transistor Infrared Detector

Design and Simulation of Microbolometer with Dual Cavity for High Figure of Merits

Thermal Behavior of Amorphous Silicon Thin Film Transistor and Its Application to Micromachined Uncooled Infrared Sensors

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

Design of Multilayer Planar Film Structures for Near-Perfect Absorption in the Visible to Near-Infrared.

The Performance Enhancement of Polysilicon Microbolometer in Standard CMOS Technology with Si3N4 Film

Process Optimization and Performance Improvement of CMOS Microbolometer with A Salicided Polysilicon Thermistor

Integrated A-Si : B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

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OPTICAL AND THERMAL DESIGN FOR MICROBOLOMETER

A Uncooled A-Si Infrared Detector with Novel Thermal Isolation Method.

Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring

Design and Fabrication of Single-Chip A-Si TFT-based Uncooled Infrared Sensors

Study on Performance of Si3N4 Enhanced Microbolometer with Salicided Polysilicon Thermistor in CMOS Technology

Vanadium Oxide Thermal Sensitive Thin Film with TiN Absorbing Layer for Uncooled Infrared Bolometer