Abstract:Potentiostatic deposition of silicon is performed in sulfolane (SL) and ionic liquid (IL) electrolytes. Electrochemical quartz crystal microbalance with damping monitoring (EQCM-D) is used as main analytical tool for the characterization of the reduction process. The apparent molar mass (Mapp) is applied for in situ estimation of the layer contamination. By means of this approach, appropriate electrolyte composition and substrate type are selected to optimize the structural properties of the layers. The application of SL electrolyte results in silicon deposition with higher efficiency compared to the IL 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide, [BMP][TFSI]. This has been associated with the instability of the IL in the presence of silicon tetrachloride and the enhanced incorporation of IL decomposition products into the growing silicon deposit. X-ray photoelectron spectroscopy (XPS) analysis supports the results about the layer composition, as suggested from the microgravimetric experiments. Attention has been given to the impact of practically relevant substrates (i.e., Cu, Ni, and vitreous carbon) on the reduction process. An effective deposition can be carried out on the metal electrodes in both electrolytes due to accelerated reaction kinetics for these types of substrates. However, on vitreous carbon (VC), a successful reduction of SiCl4 can only be accomplished in the IL, while the electroreduction process in SL is dominated by the decomposition of the electrolyte. For short deposition times, the scanning electron microscopy (SEM) images display rough morphologies in the nanometer range, which evolve further to structures with increased length scale of the surface roughness. The development of a rough interface during deposition, resulting in QCM damping at advanced stages of the process, is interpreted by a model accounting for the resistive force caused by the interaction of the liquid with a nonuniform layer interface. By using this approach, the individual contributions of the surface roughness and viscoelastic effects to the measured damping values are estimated.

Growth Characteristics of Pulse Electrodeposition Fe-Si Layer

Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Electroless Co-P Alloy Plating of Superfine Si3N4 Powders

Epitaxil Electrodeposition Of A Crystalline Metal Oxide Onto Single-Crystalline Silicon

Electrodeposition of Crystalline Si Using a Liquid Ga Electrode in Molten KF–KCl–K 2 SiF 6

Epitaxial Electrodeposition of a Crystalline Metal Oxide onto Single-Crystalline Silicon

Crystal growth of ferroelectric PbTiO 3 nanocrystals on silicon substrate via intermediates

Electrodeposition of Silicon in the Low-Temperature LiCl-KCl-CsCl-K2SiF6 Melt Under Direct and Pulse Current

Electrogravimetry and Structural Properties of Thin Silicon Layers Deposited in Sulfolane and Ionic Liquid Electrolytes

Study of Fe deposition onto root 3 x root 3-Al/Si(111) template by scanning tunneling microscopy

Nucleation and Growth of Anodic Electrodeposited Cerium Oxide Thin Film

The Growth of Sic Crystals from Cosi Molten Alloy Fluxes

Preparation and Characterization of Crystalline Silicon by Electrochemical Liquid–Liquid–Solid Crystal Growth in Ionic Liquid

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

Growing process and reaction mechanism of electroless Ni-Mo-P film on SiO_2 substrate

Pattern evolution during the growth of CrSi2 layers on Si (111) upon high current pulsed Cr ion implantation

Si:Fe Solid Solution Heavily Doped with Fe Prepared by Technique of Low Energy Ion Beam

Growth of High-Quality Superconducting FeSe0.5Te0.5Thin Films Suitable for Angle-Resolved Photoemission Spectroscopy Measurements Via Pulsed Laser Deposition

FeS2 (pyrite) Electrodeposition Thin Films and Study of Growth Mechanism

Systematic study of growth behavior of β-Al9Fe2Si2 in Al alloys with high iron and silicon contents