Abstract:Potentiostatic deposition of silicon is performed in sulfolane (SL) and ionic liquid (IL) electrolytes. Electrochemical quartz crystal microbalance with damping monitoring (EQCM-D) is used as main analytical tool for the characterization of the reduction process. The apparent molar mass (Mapp) is applied for in situ estimation of the layer contamination. By means of this approach, appropriate electrolyte composition and substrate type are selected to optimize the structural properties of the layers. The application of SL electrolyte results in silicon deposition with higher efficiency compared to the IL 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide, [BMP][TFSI]. This has been associated with the instability of the IL in the presence of silicon tetrachloride and the enhanced incorporation of IL decomposition products into the growing silicon deposit. X-ray photoelectron spectroscopy (XPS) analysis supports the results about the layer composition, as suggested from the microgravimetric experiments. Attention has been given to the impact of practically relevant substrates (i.e., Cu, Ni, and vitreous carbon) on the reduction process. An effective deposition can be carried out on the metal electrodes in both electrolytes due to accelerated reaction kinetics for these types of substrates. However, on vitreous carbon (VC), a successful reduction of SiCl4 can only be accomplished in the IL, while the electroreduction process in SL is dominated by the decomposition of the electrolyte. For short deposition times, the scanning electron microscopy (SEM) images display rough morphologies in the nanometer range, which evolve further to structures with increased length scale of the surface roughness. The development of a rough interface during deposition, resulting in QCM damping at advanced stages of the process, is interpreted by a model accounting for the resistive force caused by the interaction of the liquid with a nonuniform layer interface. By using this approach, the individual contributions of the surface roughness and viscoelastic effects to the measured damping values are estimated.

Electrodeposition of Silicon in the Low-Temperature LiCl-KCl-CsCl-K2SiF6 Melt Under Direct and Pulse Current

Electrogravimetry and Structural Properties of Thin Silicon Layers Deposited in Sulfolane and Ionic Liquid Electrolytes

Electrodeposition of Crystalline Si Using a Liquid Ga Electrode in Molten KF–KCl–K 2 SiF 6

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Effects Of Electrolytic Parameters On The Deposition Of Boron At The Cathode During Molten Salt Electrolysis Of Silicon

Preparation and Characterization of Crystalline Silicon by Electrochemical Liquid–Liquid–Solid Crystal Growth in Ionic Liquid

Processing of Zirconium Oxide Raw Materials to Produce Zirconium Silicides via Electrolysis of KCl-K2SiF6-ZrO2 Melt

Chemical Vapor Deposition of Silicon in a Lamp-Heated Reactor

Chemical Vapor Deposition Of Silicon In A Lamp-Heated Reactor - Effects Of Heat Absorption, Emission, And Conduction

Lithiation of SiO2 in Li-ion Batteries: in Situ Transmission Electron Microscopy Experiments and Theoretical Studies.

Photoelectrochemical Deposition of Silicon–Carbon Layer on P-Type Semiconductors and Aluminum–Copper Alloy in Ionic Liquid

Porous silicon formation and electropolishing

Electrodeposition of Crystalline Silicon Films from Silicon Dioxide for Low-Cost Photovoltaic Applications

Effect of Reaction Temperature on the Molten Salt Electrodeposition of Silicide Coating on Molybdenum Substrate and its Oxidation Behavior

Effects of Growth Kinetics and Surface Emissivity on Chemical Vapor Deposition of Silicon in a Lamp-Heated Single-Wafer Reactor

Electron beam induced deposition of silicon nanostructures from a liquid phase precursor

Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method

Single-Electrode Electrochemistry: Chemically Engineering Surface Adhesion and Hardness to Maximize Redox Work Extracted from Tribocharged Silicon

Toward Cost‐Effective Manufacturing of Silicon Solar Cells: Electrodeposition of High‐Quality Si Films in a CaCl2‐based Molten Salt

Study on the layering phenomenon of SiC porous layer fabricated by constant current electrochemical etching