Abstract:It is crucial to have a good phenomenological model of electronic stopping power for modeling the physics of ion implantation into crystalline silicon. In the spirit of the Brandt-Kitagawa effective charge theory, we develop a model for electronic stopping power for an ion, which can be factorized into (i) a globally averaged effective charge taking into account effects of close and distant collisions by target electrons with the ion, and (ii) a local charge density dependent electronic stopping power for a proton. This phenomenological model is implemented into both molecular dynamics and Monte Carlo simulations. There is only one free parameter in the model, namely, the one electron radius rs0 for unbound electrons. By fine tuning this parameter, it is shown that the model can work successfully for both boron and arsenic implants. We report that the results of the dopant profile simulation for both species are in excellent agreement with the experimental profiles measured by secondary-ion mass spectrometry(SIMS) over a wide range of energies and with different incident directions. We point out that the model has wide applicability, for it captures the correct physics of electronic stopping in ion implantation. This model also provides a good physically-based damping mechanism for molecular dynamics simulations in the electronic stopping power regime, as evidenced by the striking agreement of dopant profiles calculated in our molecular dynamics simulations with the SIMS data.

The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide

Molecular Dynamics Simulations of Ion Range Profiles for Heavy Ions in Light Targets

Research on dopant distribution of multi-energy boron implantations into c-SiC

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

ELECTROLYTE ELECTROREFLECTANCE (EER) SPECTROSCOPY OF ION IMPLANTED SILICON LAYER

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Formation of special shaped carrier distribution by MeV multi-energy boron ion implantation into crystal silicon

A phenomenological electronic stopping power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Evolution of secondary defects in arsenic implanted Si

Depth profiling of the Si ion implantation induced disorder and strain in 4H-SiC and the thermal annealing recovery

Simulation On Low Energy Ion Implantation Into Ge And Sige With Molecular Dynamics Method

Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-Sic Device Edge Termination Design

Comparison of electronic stopping cross sections for channeled implantation of Al ions between the 〈0001〉 and 〈11 2 ̄ 3〉 directions in 4H-SiC

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Simulation of phosphorus implantation into silicon with a single-parameter electronic stopping power model

Effects of Electronic Energy Deposition on Pre-Existing Defects in 6H–sic