Abstract:The root mean square (rms) surface roughness extracted from atomic force microscopy is widely employed to complement the characterisation of ion implantation processes in 4H-SiC. It is known that the protection of a carbon film eliminates or mitigates roughening of the SiC surface during postimplantation annealing. This study, based on a rich original data collection of Al+ ion implanted 4H-SiC samples, allows for a quantitative description of the surface morphology as a function of the annealing temperature and time and of the Al implanted concentration. With increasing thermal budget, the evolution from flat, to blurred with ripples, granular, and finally jagged surface, results in a monotonous increase in the root mean square roughness. Additional information is given by the trends of the roughness exponent and of the correlation length, extracted from the height-height correlation function, which account for the surface evolution below 1700°C and for the effect of the Al implanted concentration on the ripple size, respectively. A combination of low roughness parameter and high correlation length identify the transition from ripples to jagged morphology. LAY DESCRIPTION: Selective area doping is a key step in the fabrication of hexagonal Silicon Carbide (4H-SiC) power electronic devices. It is achieved by ion implantation followed by a high temperature postimplantation annealing to restore the lattice and electrically activate the dopants. Aluminium, the preferred p-type dopant, is electrically activated at temperature ranging between 1500°C and 2000°C. The time required to complete the activation process is longer the lower the annealing temperature, spanning between some minutes and hundreds of hours. During annealing, 4H-SiC wafers are encapsulated by a temperature-resistant carbon layer (C-cap) in order to avoid step bunching and reduce surface roughening. Nevertheless, surface modifications can occur at high temperature. For this reason, the characterisations of 4H-SiC doping processes report not only the electrical activation of the dopants, but also the root mean square surface roughness obtained at the end of the process. However, rms values can be scattered because technological parameters such as the heating system and the way to deposit and remove the C-cap can affect the final result as well as the process parameters. Furthermore, the C-cap resistance to long annealing has been proven only by electrical measurements, but the surface morphology has never been observed. This work presents a quantitative characterisation of the surface morphology of Al implanted 4H-SiC as a function of the annealing temperature, time and of the Al implanted concentration, independent of the heating system and of the C-cap technology. The produced sample collection allowed to correlate characteristic surface features with the corresponding quantities extracted from image analysis that can be more sensitive to process parameters than the sole rms. These findings can be used to enrich process optimisation tools.

Comparison of electronic stopping cross sections for channeled implantation of Al ions between the 〈0001〉 and 〈11 2 ̄ 3〉 directions in 4H-SiC

Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC

Lateral spreads of ion-implanted Al and P atoms in silicon carbide

Al-implantation induced damage in 4H-SiC

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Recombination Activity Of Sigma 3 Boundaries In Boron-Doped Multicrystalline Silicon: Influence Of Iron Contamination

Evolution of secondary defects in arsenic implanted Si

Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact

Formation of the Schottky barrier at (3 × 1)NaSi(111) surface

Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si

Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-Sic Device Edge Termination Design

4H-SiC surface morphology after Al ion implantation and annealing with C-cap

Effect of 710 MeV Bi +51 swift heavy ions irradiation on Se pre-implanted polycrystalline SiC

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Effect of crystal orientation on the implant profile and resistance of SiC

Electronic stopping in ternary material SiCN: Anomalous behavior of slow channeling helium ions

Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC