Abstract:Vanadium oxynitride (VN x O y , x+y=1) is a metallic compound between vanadium oxides (VO, V 2 O 3 , V 2 O 5 ) and vanadium nitride (VN) which would have interesting properties and functions that potentially can be supplied for different applications. In this study, vanadium nitride and oxynitride thin films were obtained by reactive magnetron sputtering using vanadium targets, Ar as plasma carrier, and a mix of N 2 and O 2 as reactive gas. The ratio of mass flow between the two gases is maintained around O 2 :N 2 =1:20 during the process. To obtain crystalline phases of oxynitrides a post rapid thermal annealing (RTP) in Ar atmosphere at 600oC and 700oC for 5 minutes was done. The purpose of the study is to define the effect of the magnetron sputtering parameters, such as reactive gas flow rates, and annealing temperature on the composition, microstructure, and optical properties of the obtained vanadium oxynitride thin films. The characterization of obtained films includes the examination of thickness and morphology by the surface profiler and SEM; identifying crystal structures and further microstructural vibration modes of molecular polarizability by X-ray diffraction and Raman spectroscopy, respectively; evaluation of the chemical composition of films by XPS analysis; assessing of optical transmittance, reflectance, and absorbance by the UV-visible- NIR spectrometer. Experimental data reveal that the annealed films can be oxynitrides when the oxygen flow rate is below 0.25 sccm and the ratio of oxygen/nitrogen ≤1/20. The annealed vanadium oxynitride films in terms of their properties are closer to vanadium nitrides than to oxides: more metallic than semi-conductive with dark appurtenance and high optical absorbance across the spectrum between 200 and 900 nm. The optical absorbance reaches almost 90% around 300 nm and then slowly reduces to 70% at 900 nm. Thus, these films could be good optical shields. For practical usage, the deposition of O 2 :N 2 =1/20, O 2 <0.25 sccm, and 600oC annealing are recommended because of the truly low transmittance (<10%) through films.

Predicting Thin Film Stoichiometry in V-O-2 Reactive Sputtering

Modeling for Calculation of Vanadium Oxide Film Composition in Reactive-Sputtering Process

Modeling for V—O 2 Reactive Sputtering Process Using a Pulsed Power Supply

Analysis Of Titanium And Vanadium Oxide Thin Film By Method Of Reactive Co-Sputtering

Modeling the Reactive Sputter Deposition of Ti-doped VO X Thin Films

Phase compositions and property of VOx thin films by magnetron sputtering

Modeling and Experiments of N-Doped Vanadium Oxide Prepared by A Reactive Sputtering Process

Effects of Deposition Parameters on the Properties of VO2 Thin Films

New method for preparing VO2 films

Study on Preparation Technique and Characteristics of Vanadium Oxide Thin Films

Target Voltage Behaviour of a Vanadium-Oxide Thin Film During Reactive Magnetron Sputtering

Electrical property of vanadium oxides films prepared by reactive RF sputtering

Simulation of the Optical Properties of the Vanadium Oxide Thin Films by Effective Medium Theory

Effects of Duty Cycle and Oxygen Flow Rate on the Formation and Properties of Vanadium Oxide Films Deposited by Pulsed Reactive Sputtering

Influence of A Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium Oxide

Preparation and Characteristics of Vanadium Oxide Thin Films by Controlling the Sputtering Voltage

(Digital Presentation) Fabrication and Characterization for Vanadium Oxynitride Thin Films By Magnetron Sputtering

Vanadium Oxide Thin Films Prepared by Rf Magnetron Sputtering Method

Vanadium oxide thin films prepared by reactive magnetron sputtering

Reactive pulsed DC magnetron sputtering deposition of vanadium oxide thin films: Role of pulse frequency on the film growth and properties

Study on Optical Properties of Vanadium Oxide Film Prepared by Reactive Magnetron Sputtering