Electrical property of vanadium oxides films prepared by reactive RF sputtering

Zi-ye AN,Wei-zhe GAO,Wei ZHU,Zeng-ming ZHANG,La-zhen SUN
DOI: https://doi.org/10.3969/j.issn.1005-4642.2016.07.010
2016-01-01
Abstract:VOx films were prepared using RF sputtering by controlling the ratio of Ar and O2 in the vacuum chamber.Because of the wide variety of oxides of vanadium,the partial pressure of oxygen could significantly influence the components of the films.Although no VO2 peaks were observed in the X-ray diffraction results,the specific electrical property was observed when the ratio of oxygen was around 40%~50%.
What problem does this paper attempt to address?