Abstract:A novel method is described for preparing high-quality VO2 thin films which exhibit an abrupt resistivity change of 4-5 orders of magnitude at about 60 degrees C; this is the best result among those so far prepared on non-crystal substrates. To show the difference from the ordinary sol-gel method which uses vanadium alkoxide as precursor, this method has been called (by the authors) the inorganic sol-gel method, for it uses V2O5 powder as precursor. This newly developed method shows some advantages in that it produces high-quality VO2 thin films (adherent, crack-free, and with good switching properties) in a cheap, simple, and reproducible way. The method consists of four processes: quenching, coating, drying and vacuum heat treatment. These processes show strong effects on the properties of the final films. In this paper, the effects of the drying process on the film blistering and the effects of film thickness, quenching temperature, and heat treatment time on the resistivity switching property were studied, and DSC, XRD, ESCA, and SEM were utilized to study the drying process and characterize the films. It was found that when the drying temperature was > 300 degrees C and heating rate was < 0.5 degrees C min(-1) in the drying process, the final films would be blister-free and crack-free (on non-crystal substrates). It was also found that the magnitude of resistivity change at the phase transition of the samples treated at 500 degrees C for 10 h under a pressure of 0.8 Pa increased with increasing thickness (in the thickness range 0.4 to 8 mu m). When the film thickness was about 1 mu m, the magnitude of resistivity change of the samples treated under the same conditions was found to decrease with increasing quenching temperature. In a certain range of treatment time the magnitude of resistivity change of the samples treated at 500 degrees C under a pressure of 0.8 Pa was found to increase with increasing heat treatment time.

Preparation and Characteristics of Vanadium Oxide Thin Films by Controlling the Sputtering Voltage

Sputtering Voltage in the Growth of Vanadium Oxide Thin Films

Study on Preparation Technique and Characteristics of Vanadium Oxide Thin Films

Effects of Duty Cycle and Oxygen Flow Rate on the Formation and Properties of Vanadium Oxide Films Deposited by Pulsed Reactive Sputtering

Effects of Deposition Parameters on the Properties of VO2 Thin Films

Vanadium Oxide Thin Films Prepared by Rf Magnetron Sputtering Method

Effect of Temperature on the Growth of Vanadium Oxide Films Deposited by DC Reactive Magnetron Sputtering

Fabrication of vanadium dioxide films at low temperature and researches on properties of the films

Controlling the Growth of VOx Films for Various Optoelectronic Applications

Electrical property of vanadium oxides films prepared by reactive RF sputtering

Effect of Duty Cycle on the Electrical and Optical Properties of VOx Film Deposited by Pulsed Reactive Magnetron Sputtering

Influences of Sputtering Conditions on Preparation of VOx Thin Film and Its Ohmic Contact to Metal Electrode

Microstructural Features, Electrical and Optical Properties of Pulsed-Sputter Deposited V2O5 Thin Films

Reactive pulsed DC magnetron sputtering deposition of vanadium oxide thin films: Role of pulse frequency on the film growth and properties

Vanadium dioxide films with good electrical switching property

Target Voltage Behaviour of a Vanadium-Oxide Thin Film During Reactive Magnetron Sputtering

Studies of Vanadium Oxide Thin Films Prepared by R.F.Magnetron Sputtering Methods

Growth of Vanadium Oxide Thin Films for Microbolometer

Modeling for Calculation of Vanadium Oxide Film Composition in Reactive-Sputtering Process

Study of Preparation and Characteristics Optimization of VO2 (B) Thin Films

Substrate Effect on the Growth and Thermal Electrical Properties of Vanadium Oxide Thin Films