Surface Oxidation State Variations and Insulator–Metal Transition Modulations in Vanadium Oxides with Pulsed Hydrogen Plasma

Lepeng Zhang,Linkui Niu,Wanli Yang,Tiantian Huang,Rui Zhang,Peiran Xu,Feng Liu,Zhimin Chen,Xin Chen,Ning Dai
DOI: https://doi.org/10.1002/admi.202300003
IF: 5.4
2023-04-20
Advanced Materials Interfaces
Abstract:Surface stoichiometry and oxidation states usually decide the microstructural characteristics and functions of correlated vanadium oxides. Oxygen defects and low oxygen states originate from a surface reduction with pulsed hydrogen plasma, which effectively changes insulator‐metal transition in vanadium dioxide. Such electrical modulations will contribute to understand the essential physics behind phase transitions in vanadium oxides toward advanced devices. Surface often determines the formation and function of nanoscale thin films and nanomaterials. In correlated vanadium oxides, oxidation states and stoichiometry play important roles in regulating reversible insulator–metal transition (IMT) behaviors. This study presents the surface oxidation state reductions and IMT modulations in vanadium oxides. Oxidation states of vanadium in the surface layer are changed in the nanostructures of vanadium oxides through pulsed hydrogen plasma (PHP). The thickness‐dependent variations are also observed with Raman and X‐ray photoelectron spectroscopy (XPS), and verified in vanadium oxides with different oxidation states. Obvious modulations on IMT behaviors are then demonstrated and related to such variation of surface oxidation states in the VO2 thin film and nanobeam. It is expected that such surface manipulations are beneficial to a better understanding of the IMT in correlated vanadium oxides and the fabrication of advanced functional electronic and photoelectronic devices.
materials science, multidisciplinary,chemistry
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