Researches on the Electrical Properties of Vanadium Oxide Thin Films on Si Substrates

Xiong Ying,Wen Qi-Ye,Tian Wei,Mao Qi,Chen Zhi,Yang Qing-Hui,Jing Yu-Lan
DOI: https://doi.org/10.7498/aps.64.017102
2015-01-01
Abstract:Quality enhanced VO2 thin films have been sputtering deposited on silicon substrates by introducing an ultrathin Al2 O3 buffer between the substrate and the film. With a preferred orientation (011), the VO2 films have an excellent thermal-induced metal-insulator transition (MIT). The electrically-driven MIT (E-MIT) characteristics have also been investigated by applying voltage to VO2 thin film based two-terminal device at particular temperatures. Sharp jumps in electric current are observed in the I-V curve with a variation of amplitude by two orders. The threshold voltage decreases with increasing temperature. At room tempature, the threshold voltage is 8.6V and the phase transition ccurs in a voltage width of only 0.1V. With the sharp and fast phase change, the VO2 thin films can be used in ultrafast switching electronic devices.
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