Abstract:Silicon thin film technology has been driven by hydrogenated amorphous and microcrystalline silicon thin films which are routinely produced using silane plasmas. While SiH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> is often considered as the main radical for the obtaining of such films, we have shown that changing the process to conditions where silicon clusters and nanocrystals are produced in the plasma can lead to high deposition rates and improved materials, such as hydrogenated polymorphous silicon and polycrystalline silicon [1]. Moreover, by changing the substrate from glass to crystalline silicon, it is possible to produce epitaxial crystalline silicon films (c-Si:H) which can be transferred to foreign substrates to make ultrathin crystalline silicon solar cells [2], [3]. Interestingly enough the structure of these films is found to be tetragonal, indicative of their particular growth process [4]. Even more interesting, this low temperature epitaxial process can be extended to doped films as well as to germanium and SiGe alloys and their heteroepitaxial growth on GaAs [5]. Last but not least, combining PECVD with low melting temperature metal nanoparticles such as indium and tin opens the way to the growth of nanowires (including Ge, Si and GeSn), which allow to achieve efficient light trapping and carrier collection in radial junction solar cells [6] or even to growth in-plane c-Si nanowires for stretchable electronics and photonics applications [7], [8].

Process Parameter Selection Study on SiNx:H Films by PECVD Method for Silicon Solar Cells

Optimization of Process Parameters for SiNx∶ H Films Deposited by PECVD Method through Orthogonal Experimental Design

PROPERTIES OF PECVD SiNx FILM FOR SOLAR CELLS

Mathematical Evaluation of a-Si:H Film Formation in rf-PECVD Systems

Influence of PECVD Process Parameters on the Etching Rate of SiN X Films

Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application

Defining a Parameter of Plasma-Enhanced CVD to Characterize the Effect of Silicon-Surface Passivation in Heterojunction Solar Cells

Advanced PECVD Processes for SiNW Based Solar Cells and Thin Film Transistors

Processing and Characterisation of PECVD Silicon Nitride Films

Feasibility of molecular dynamics simulation for process parameter guidance of silicon nitride thin films by PECVD

Influence of PECVD process on the etching rate of SiNx films

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

Deposition and Characterization of High-Efficiency Silicon Thin-Film Solar Cells by HF-PECVD and OES Technology

Optimization of Operating Parameters in Polysilicon Chemical Vapor Deposition Reactor with Response Surface Methodology

Study on P-a-Si:H properties of N-type heterogeneous junction solar cells manufactured by large-area parallel plate PECVD machine

Ellipsometry study on silicon nitride film with uneven thickness distribution by plasma-enhanced chemical vapor deposition

A Study on the Application of Thin Film Passivation and Crystalline Silicon Solar Cells Using PECVD Process

Fabrication and Optimization of Single-Junction Nc-Si:H N–i–p Solar Cells Using Si:H Phase Diagram Concepts Developed by Real Time Spectroscopic Ellipsometry

Multi-model Simulation of 300 Mm Silicon-Nitride Thin-Film Deposition by PECVD and Experimental Verification

High-Density Plasma-Enhanced Chemical Vapor Deposition Of Si-Based Materials For Solar Cell Applications

Advancement in Treating Some Features of CIGS Thin Film Solar Cells During Manufacturing