Abstract:Over the past several years, the formation of nanowire heterostructures via a solid-state reaction between a semiconductor nanowire and metal contact pads has attracted great interest. This is owing to its ready application in nanowire field-effect transistors (FETs) with a well-controlled channel length using a facile rapid thermal annealing process. We report the effect of oxide confinement on the formation of Ge nanowire heterostructures via a controlled reaction between a vapor-liquid-solid-grown, single-crystalline Ge nanowire and Ni pads. In contrast to the previous formation of Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni(2)Ge and Ge with the confinement of Al(2)O(3) during annealing. Significantly, back-gate FETs based on this Ni(2)Ge/NiGe/Ge/NiGe/Ni(2)Ge heterostructure demonstrated a high-performance p-type transistor behavior, showing a large on/off ratio of more than 10(5) and a high normalized transconductance of 2.4 μS/μm. The field-effect hole mobility was extracted to be 210 cm(2)/(V s). Temperature-dependent I-V measurements further confirmed that NiGe has an ideal ohmic contact to p-type Ge with a small Schottky barrier height of 0.11 eV. Moreover, the hysteresis during gate bias sweeping was significantly reduced after Al(2)O(3) passivation, and our Ω-gate Ge nanowire FETs using Al(2)O(3) as the top-gate dielectric showed an enhanced subthreshold swing and transconductance. Therefore, we conclude that the Al(2)O(3) layer can effectively passivate the Ge surface and also serve as a good gate dielectric in Ge top-gate FETs. Our innovative approach provides another freedom to control the growth of nanowire heterostructure and to further achieve high-performance nanowire transistors.

Growth and Properties of Single-Crystalline Ge Nanowires and Germanide/Ge Nano-Heterostructures

Formation and Device Application of Ge Nanowire Heterostructures Via Rapid Thermal Annealing

Growth And Electrical Transport Of Germanium Nanowires

Single-crystalline Ni2Ge/Ge/Ni2Ge Nanowire Heterostructure Transistors

Oriented Growth of Ge Nanowires with Diameters below the Bohr Radius

Monolithic growth of ultra-thin Ge nanowires on Si(001)

Spontaneous growth and phase transformation of highly conductive nickel germanide nanowires.

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing

Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition

Crystallinity-Controlled Germanium Nanowire Arrays: Potential Field Emitters

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy

Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

Optoelectronic Properties Of Single-Crystalline Zn2geo4 Nanowires

Germanium nanowires: Synthesis, electrical and “catalytic” properties

Self-assembled Single Crystal Germanium Nanowires Arrays under Supercritical Hydrothermal Conditions

Synthesis And Transistor Performances Of High Quality Single Crystalline Vapor-Liquid-Solid Grown Si1-Xgex Nanowire

Properties of the Bare, Passivated and Doped Germanium Nanowire: A Density-Functional Theory Study

Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Vertically Oriented Epitaxial Germanium Nanowires on Silicon Substrates Using Thin Germanium Buffer Layers