Abstract:We report the nanocluster-catalyzed growth of ultralong and highly uniform single-crystalline silicon nanowires (SiNWs) with millimeter-scale lengths and aspect ratios up to approximately 100,000. The average SiNW growth rate using disilane (Si 2H 6) at 400 degrees C was 31 microm/min, while the growth rate determined for silane (SiH 4) reactant under similar growth conditions was 130 times lower. Transmission electron microscopy studies of millimeter-long SiNWs with diameters of 20-80 nm show that the nanowires grow preferentially along the 110 direction independent of diameter. In addition, ultralong SiNWs were used as building blocks to fabricate one-dimensional arrays of field-effect transistors (FETs) consisting of approximately 100 independent devices per nanowire. Significantly, electrical transport measurements demonstrated that the millimeter-long SiNWs had uniform electrical properties along the entire length of wires, and each device can behave as a reliable FET with an on-state current, threshold voltage, and transconductance values (average +/-1 standard deviation) of 1.8 +/- 0.3 microA, 6.0 +/- 1.1 V, 210 +/- 60 nS, respectively. Electronically uniform millimeter-long SiNWs were also functionalized with monoclonal antibody receptors and used to demonstrate multiplexed detection of cancer marker proteins with a single nanowire. The synthesis of structurally and electronically uniform ultralong SiNWs may open up new opportunities for integrated nanoelectronics and could serve as unique building blocks linking integrated structures from the nanometer through millimeter length scales.

Monolithic growth of ultra-thin Ge nanowires on Si(001)

Ultrafast growth of single-crystalline Si nanowires

Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Self-organized Growth of Microsized Ge Wires on Si (111) Surfaces

Growth and Properties of Single-Crystalline Ge Nanowires and Germanide/Ge Nano-Heterostructures

Vertically Oriented Epitaxial Germanium Nanowires on Silicon Substrates Using Thin Germanium Buffer Layers

Single-Crystalline Ge Nanowires and Cu3ge/Ge Nano-Heterostructures

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Oriented Growth of Ge Nanowires with Diameters below the Bohr Radius

Vertically standing Ge nanowires on GaAs(110) substrates.

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Synthesis and properties of Si and SiGe/Si nanowires

Single-crystal germanium layers grown on silicon by nanowire seeding

Control of Ge island coalescence for the formation of nanowires on silicon.

A Promising Routine to Fabricate GeSi Nanowires Via Self-Assembly on Miscut Si (001) Substrates

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Epitaxial Growth of Vertically Free-Standing Ultra-Thin Silicon Nanowires.

Silicon Nanowires, Catalytic Growth and Electrical Characterization

The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy

Growth And Electrical Transport Of Germanium Nanowires

Controlled synthesis of millimeter-long silicon nanowires with uniform electronic properties.