Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Graphene Field-Effect Transistor Current Source with Double Top-Gates and Double Feedback

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Tunable Transport Characteristics of Double-Gated Graphene Field-Effect Transistors Using P(VDF-TrFE) Ferroelectric Gating

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Current Enhanced Double-Gate TFET with Source Pocket and Asymmetric Gate Oxide

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

Back-Gate Graphene Field-Effect Transistors with Double Conductance Minima

An efficient GFET structure

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

A High-Performance Top-Gate Graphene Field-Effect Transistor Based Frequency Doubler

Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/off Ratio.

Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

Graphene-GaAs/AlxGa1−xAs heterostructure dual-function field-effect transistor

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

Double-gate-all-around Tunnel Field-Effect Transistor