Abstract:The short‐channel tunneling transistor comprising all 2D components is developed, exhibiting high switching performance due to the energy band modulation of vertical heterojunction through the dual‐gates. Leveraging the unique short‐channel and tunneling mechanism, it can circumvent the general issues of voltage spikes and long reverse recovery time, realizing an access to high‐frequency integrated circuits (IC) interface. With continuous size scaling, the surface dangling bonds and short‐channel effects will degrade silicon based transistor performance. Thus, it is of great importance to seek new channel materials and transistor architectures to further continue Moore's law. Herein, a new ultra‐thin short‐channel tunneling transistor is developed comprising all 2D‐ components. Distinct from usual 2D planar transistor, this device is configured with vertical MoS2/WSe2 junction and in‐plane WSe2 channel, the switch states are realized by the gate‐regulated barrier height of heterojunction, enabling the transition of transport mechanism between thermionic‐emission and tunneling. Under dual‐gate configuration, the transistor exhibits high performance with drive current of 4.58 μA, on/off ratio of 4 × 107, subthreshold swing (SS) of 97 mV decade−1 and drain‐induced barrier lowering (DIBL) of 12 mV V−1, that can meet the requirement of logical applications in integrated circuits (IC). Taking advantage of the high‐speed tunneling current and unique short‐channel architecture, the device overcomes the issues of voltage spikes and long reverse recovery time that exist in usual electric components, and thus gains an access to the IC interface. This work provides a proof‐of‐concept transistor architecture relying on dual‐gate modulation, opening up a promising perspective for next generation low‐power, high‐density, and large‐scale IC technologies.

Double-gate-all-around Tunnel Field-Effect Transistor

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

Double-gate Tunneling FET with Asymmetric Gate Structure and Pocket Source

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Simulation Study on A New Dual-Material Nanowire Mos Surrounding-Gate Transistor

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

Current Enhanced PNPN Tunnel Field-Effect Transistor with L-shaped Gate

A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

Numerical study on gate-All-Around tunneling FET with SiO2 core and Si shell structure

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

A Gate-All-Around Tunneling Field-Effect Transistor with SiO2 Core and Si Shell Structure

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

A Novel 10-Nm Physical Gate Length Double-Gate Junction Field Effect Transistor