Electroluminescence from Er-doped GeO 2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties
Rui Ma,Zhimin Yu,Zejun Ye,Yang Yang,Jiaming Sun
DOI: https://doi.org/10.1016/j.apsusc.2023.158187
IF: 6.7
2023-08-11
Applied Surface Science
Abstract:Er-doped GeO 2 (GeO 2 :Er) nanofilms are fabricated by atomic layer deposition on silicon, from which the 1530 nm electroluminescence (EL) is achieved. The GeO 2 :Er nanofilms maintain the amorphous structure after annealing at 600–1000 °C, while the annealing above 800 °C results in the loss of Ge due to the volatile GeO x (x < 2) species. These GeO 2 :Er nanofilms could withstand the wet lithography process and the prototype devices could operate under the constant current. The 650 °C annealed GeO 2 :Er devices manifest the threshold of ∼40 V and 10 −7 A, while the maximum injection current is 0.28 A/cm 2 . The EL power density from the device doped with 3.09 mol% Er reaches to 2.2 mW/cm 2 , with the external quantum efficiency of 7.3% and power efficiency of 0.17%. The conduction mechanism for the excitation of Er emission confirms to the trap-assisted tunneling mode within the amorphous GeO 2 :Er nanolaminates. This work demonstrates the potential of GeO 2 :Er nanofilms in the utilization of Si-based optoelectronics.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films