Abstract:The resistance-switching memristor with capabilities of information storage and brain-inspired computing has prime importance in recent research. In this study, the impact of crystallinity and Indium diffusion on the existence of analog and digital resistive switching in a W/TiO2/ITO device has been reported. The memristor devices are fabricated by depositing titania films by sol-gel and spin-coating techniques. The films annealed at 250 °C and 400 °C were characterized using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy (XPS). The characteristic anatase phase started appearing after annealing at 400 °C, whereas the 250 °C annealed sample was in the amorphous state. The electrical characterization revealed significant differences in the switching characteristics of amorphous and crystalline samples, especially in the switching interface, compliance properties, and current conduction mechanism. The grain boundary assisted oxygen vacancy migration, and the diffusion of indium ions from the ITO substrate helped the crystalline sample to show highly stable and reproducible resistive switching compared to amorphous film. The XPS studies confirmed the indium ion diffusion in the crystalline sample. The oxygen vacancy-induced barrier modulation and conductive filament formation caused characteristic switching in amorphous and crystalline samples, respectively. Schottky emission in the amorphous film and SCLC mechanism in the crystalline film confirmed the experimental results. This study provides a distinctive viewpoint and an innovative strategy for developing multifunctional resistive switching devices.

Improved Resistive Switching Properties Of Solution Processed Tio2 Thin Films

Improved Resistive Switching Properties of Solution-Processed Tiox Film by Incorporating Atomic Layer Deposited Tio2 Layer

Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application

Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices

Resistive switching and synaptic learning performance of a TiO2 thin film based device prepared by sol–gel and spin coating techniques

Excellent resistive switching property and physical mechanism of amorphous TiO 2 thin films fabricated by a low-temperature photochemical solution deposition method

Bipolar Resistive Switching Effect and Mechanism of Solution-Processed Orthorhombic Bi2SiO5 Thin Films

Uniform Bipolar Resistive Switching Properties with Self-Compliance Effect of Pt/TiO2/p-Si Devices

Effects of the Compliance Current on the Resistive Switching Behavior of TiO2 Thin Films

The Resistive Switching in TiO2 Films Studied by Conductive Atomic Force Microscopy and Kelvin Probe Force Microscopy

Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films

Controlling resistive switching behavior in the solution processed SiO2-x device by the insertion of TiO2 nanoparticles

Analog and Digital Resistive Switching in W/TiO2/ITO Devices: The Impact of Crystallinity and Indium Diffusion

Reversible resistance switching properties in Ti-doped polycrystalline Ta 2 O 5 thin films

Unipolar Resistive Switching Effect and Mechanism of Solution-Processed Spinel Co3o4 Thin Films

Resistive Switching of Polymer Thin Films Embedded with TiO2 Nanoparticles by Vacuum Spraying

Bipolar resistive switching in amorphous titanium oxide thin films

Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film

Multilevel Resistive Switching Effect in Sillenite Structure Bi12tio20 Thin Films

Resistive Switching Behavior and Mechanism of Room-Temperature-fabricated Flexible Al/TiS2-PVP/ITO/PET Memory Devices

Bipolar Resistive Switching Characteristics and Mechanism in the TiN/SiOx/Pt Structure