The Resistive Switching in TiO2 Films Studied by Conductive Atomic Force Microscopy and Kelvin Probe Force Microscopy

Yuanmin Du,Amit Kumar,Hui Pan,Kaiyang Zeng,Shijie Wang,Ping Yang,Andrew Thye Shen Wee
DOI: https://doi.org/10.1063/1.4818119
IF: 1.697
2013-01-01
AIP Advances
Abstract:The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon.
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