Field-induced Resistive Switching Based on Space-Charge-limited Current

Yidong Xia,Weiye He,Liang Chen,Xiangkang Meng,Zhiguo Liu

DOI: https://doi.org/10.1063/1.2430912

IF: 4

2007-01-01

Applied Physics Letters

Abstract:Polycrystalline (Ba,Sr)(Zr,Ti)O3 thin films sandwiched between two Pt electrodes have been revealed to exhibit hysteretic current-voltage (I-V) characteristics and resistive switching at room temperature. High- and low-resistance states, as well as a less abrupt state transition, occur during the voltage cycle. The maximum ratio between these two resistance states is about 230. Analyses of I-V behaviors have been executed, and it is proposed that space-charge-limited-current conduction in higher voltage region caused by asymmetric electron trapping centers is responsible for such transition of resistance states.