Conduction Behavior Change Responsible for the Resistive Switching As Investigated by Complex Impedance Spectroscopy

Yidong Xia,Zhiguo Liu,Yang Wang,Lei Shi,Liang Chen,Jiang Yin,Xiangkang Meng
DOI: https://doi.org/10.1063/1.2780083
IF: 4
2007-01-01
Applied Physics Letters
Abstract:Complex impedance spectroscopy has been employed to investigate the conduction behavior of (Ba,Sr)(Zr,Ti)O3 thin films in the low- and high-resistance states for resistive switching applications. The domination of the grain bulk effect on the resistive switching is demonstrated. The analyses of activation energies for the conduction in the low- and high-resistance states have been executed comparatively. It is proposed that the first and the second ionization of oxygen vacancies are responsible for the conduction in the low- and high-resistance states, respectively. The transition of conduction mechanism is also discussed.
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