Abstract:The interface-type resistive switching devices exhibiting bipolar and multi-level resistive switching have been considered as the key component for neuromorphic device applications. To directly observe the microscopic details of underlying electrochemical redox reactions occuring at a metal/oxide interface, we implemented in situ resistive switching of TiN/Pr0.7Ca0.3MnO3 (PCMO)/Pt junction devices in a transmission electron microscope (TEM). The in situ TEM observations directly show that an intermediate reaction layer (TiOxNy), growing and shrinking in the thickness range of a few nanometers at the TiN/PCMO interface in response to the applied voltage, mainly determines the device resistance by limiting the transport of charge carriers via the Poole-Frenkel conduction mechanism. A detailed analysis of in situ TEM observations demonstrates that electrochemical redox reactions at the TiN/PCMO interface are facilitated by the electric field driven drift of oxygen as well as Ti ions with a much stronger influence of the oxygen ions. As such, the reaction kinetics are governed by the electric field acting across the TiOxNy reaction layer. This layer defines the critical field for the onset of switching, which is measured to be of the order of 106 V cm-1, a typical value at which the ionic drift velocity starts increasing exponentially with the field according to the nonlinear ionic drift model. The present results indicate that understanding the nature of the electric field driven drift of ions in a nanoscale solid electrolyte is a key to the precise control of the resistive switching of metal/insulator/metal junction devices via voltage stimulations.

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

Bipolar resistive switching in amorphous titanium oxide thin films

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface

Optical Erasable Bipolar Resistive Switching on TiO2 Film in Nanoscale

Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Microscopic Mechanism for Unipolar Resistive Switching Behaviour of Nickel Oxides

The Resistive Switching in TiO2 Films Studied by Conductive Atomic Force Microscopy and Kelvin Probe Force Microscopy

In situ TEM Observation of Resistance Switching in Titanate Based Device

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Direct observation of oxygen movement during resistance switching in NiO/Pt film

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage

Correlation Between Growth Kinetics and Nanoscale Resistive Switching Properties of Srtio3 Thin Films

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies

Microstructure Evolution Characteristics Induced by Oxygen Vacancy Generation in Anatase TiO2 Based Resistive Switching Devices

Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices

Resistive switching and synaptic learning performance of a TiO2 thin film based device prepared by sol–gel and spin coating techniques

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts.

Nanoscale imaging of He-ion irradiation effects on amorphous TaO$_x$ toward electroforming-free neuromorphic functions