Abstract:Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO$_x$ as a model material system. Specifically, we apply Scanning Microwave Impedance Microscopy (sMIM) and cathodoluminescence (CL) microscopy as direct probes of conductance and electronic structure, respectively. These methods provide direct evidence of the electronic state of TaO$_x$ despite its amorphous nature. For example CL identifies characteristic impurity levels in TaO$_x$, in agreement with first principles calculations. We applied these methods to investigate He-ion-beam irradiation as a path to activate conductivity of materials and enable electroforming-free control over resistive switching. However, we find that even though He-ions begin to modify the nature of bonds even at the lowest doses, the films conductive properties exhibit remarkable stability with large displacement damage and they are driven to metallic states only at the limit of structural decomposition. Finally, we show that electroforming in a nanoscale junction can be carried out with a dissipated power of < 20 nW, a much smaller value compared to earlier studies and one that minimizes irreversible structural modifications of the films. The multimodal approach described here provides a new framework toward the theory/experiment guided design and optimization of electroresistive materials.

What problem does this paper attempt to address?

This paper mainly discusses how to study the influence of high-energy helium ion beam on the electroforming of amorphous TaOx thin film for free neural morphological function through nanoscale imaging technology. In the study, scientists used scanning microwave impedance microscopy (sMIM) and cathode luminescence (CL) microscopy to directly detect the conductivity and electronic structure of the material. These methods revealed detailed information about the electronic states of TaOx despite its amorphous nature. The study found that the helium ion beam started to change the bonding properties of the material, but significant damage to the material structure and the transition to a metallic state only occurred at very high doses. The focus of the paper is to understand and control the mechanism of resistance switching, especially how to activate the electrical conductivity of the material through high-energy ion radiation without the need for traditional electroforming process. Although helium ion radiation does affect the electronic structure, its impact on resistance switching is minimal until reaching high doses that cause significant changes. The study also showed that electroforming can be performed at the nanoscale junction with a power consumption as low as 20 nW, which is much lower than previous research and reduces irreversible structural modifications of the thin film. The paper points out that understanding the mechanism of resistance switching under non-equilibrium conditions is crucial for optimizing devices and achieving large-scale applications. The researchers adopted a multimodal approach, combining various quantitative techniques with first-principles calculations, to provide a new framework for designing and optimizing electroresistive materials. The research results are of great significance for reducing power consumption in neural morphic computing and memory devices, as well as improving repeatability and controllability.

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