Controlled Formation of Conduction Channels in Memristive Devices Observed by X‐ray Multimodal Imaging
Huajun Liu,Yongqi Dong,Mirza Galib,Zhonghou Cai,Liliana Stan,Lei Zhang,Ady Suwardi,Jing Wu,Jing Cao,Chee Kiang Ivan Tan,Subramanian K. R. S. Sankaranarayanan,Badri Narayanan,Hua Zhou,Dillon D. Fong
DOI: https://doi.org/10.1002/adma.202203209
IF: 29.4
2022-07-07
Advanced Materials
Abstract:Neuromorphic computing provides a means for achieving faster and more energy efficient computations than conventional digital computers for artificial intelligence (AI). However, its current accuracy is generally less than the dominant software‐based AI. The key to improving accuracy is to reduce the intrinsic randomness of memristive devices, emulating synapses in the brain for neuromorphic computing. Here using a planar device as a model system, we achieve the controlled formation of conduction channels with high oxygen vacancy concentrations through the design of sharp protrusions in the electrode gap, as observed by X‐ray multimodal imaging of both oxygen stoichiometry and crystallinity. Classical molecular dynamics simulations confirm that the controlled formation of conduction channels arises from confinement of the electric field, yielding a reproducible spatial distribution of oxygen vacancies across switching cycles. Our work demonstrates an effective route to control the otherwise random electroforming process by electrode design, facilitating the development of more accurate memristive devices for neuromorphic computing. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology