Observation of drift and diffusion processes in Ti/TiOx/Ti memristive devices prepared by local anodic oxidation

I. Batko,M. Batkova

DOI: https://doi.org/10.1051/epjap/2012120102

2011-10-12

Abstract:We demonstrate that memristive devices can be fabricated by tip-induced oxidation of thin metallic films using atomic force microscope. Electrical measurements of such prepared Ti/TiOx/Ti test structures confirmed their memristive behavior and inferred diffusion of oxygen vacancies in the TiOx barrier. Consequent Kelvin probe force microscopy studies provided evidence for the diffusion, as well as for expected oxygen vacancy drift. Time evolution of the space distribution of the vacancies due to the diffusion process revealed minute-scale (at least) retention times of the devices. The work presents technology alternative for fabrication of memristive nanodevices in geometry favouring advantageous scanning probe microscopy studies of their in-barrier processes, as well as widely utilizable approach to search for novel oxide materials for perspective memristive applications.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on two aspects:

1. **Innovation in preparation process**: The paper aims to show how to prepare metal/oxide/metal (MIM) - type nano - devices with memristor behavior through tip - induced oxidation technology. This method can produce device structures suitable for studying phenomena within the oxide barrier using scanning probe microscopy (SPM) technology. For traditional vertically - stacked memristors, the top electrode needs to be removed when conducting SPM research, which increases the complexity and cost of the experiment. However, the lateral planar structure prepared by tip - induced oxidation technology allows for direct observation of the oxidized area, simplifying the experimental process.

2. **Research on physical mechanisms**: The paper also attempts to directly observe and verify the drift and diffusion processes of oxygen vacancies in titanium oxide (TiOx) through experiments. These processes are crucial for understanding the working principle of memristors, especially how the movement of oxygen vacancies affects the resistance state of the device. Through Kelvin probe force microscopy (KPFM) research, the paper provides direct evidence of the movement of oxygen vacancies under the action of voltage and the subsequent diffusion process, revealing that the retention time of the device is at least on the order of minutes.

### Specific problem analysis

- **Preparation process**:
- **Method**: Use the tip - induced oxidation technology of atomic force microscope (AFM) to form a TiOx oxide layer on the titanium thin film, thereby preparing a Ti/TiOx/Ti structure.
- **Advantage**: The device with this lateral planar structure is convenient for detailed research using SPM technology, especially for characterizing the physical and chemical properties within the oxide barrier.

- **Physical mechanism**:
- **Experimental means**: Measure the change in surface potential through KPFM to observe the drift and diffusion processes of oxygen vacancies under the action of voltage.
- **Result**: The experimental results show that oxygen vacancies drift towards the cathode direction under the action of voltage and gradually diffuse back to the initial state after the voltage is removed. The time constant of this process is about several tens of minutes, indicating that the device has a retention time on the order of minutes.

### Conclusion

The paper successfully prepared a Ti/TiOx/Ti memristor through tip - induced oxidation technology and directly observed the drift and diffusion processes of oxygen vacancies through KPFM technology. These findings not only verify the theoretical model but also provide new technologies and methods for developing new oxide materials for memristor applications.