Direct observation of oxygen movement during resistance switching in NiO/Pt film

Chikako Yoshida,Kentaro Kinoshita,Takahiro Yamasaki,Yoshihiro Sugiyama
DOI: https://doi.org/10.1063/1.2966141
IF: 4
2008-07-28
Applied Physics Letters
Abstract:We demonstrate that both a low resistance state and a high resistance state can be written by bipolar voltage application in a local region of NiO/Pt films by using conducting atomic force microscopy. To investigate how oxygen played a role in the resistance switching phenomenon, a local writing process in O18 tracer gas atmosphere was carried out and the composition change was examined by time-of-flight secondary ion mass spectroscopy. As a result, it was revealed that oxygen moves to the anode side, and the composition of the NiO surface might change thereby causing the change in resistance.
physics, applied
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