Abstract:Author(s): Wang Chen, Wen Pan, Peng Cong, Xu Meng, Chen Long-Long, Li Xi-Feng, Zhang Jian-Hua Amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFT) are widely used in active-matrix displays because of their excellent stability, low off-current, high field-effect mobility, and good process compatibility. Among IGZO TFT device structures, back channel etching (BCE) is favorable due to low production cost, short channel length and small SD-to-gate capacitance. In this work, prepared are the BCE IGZO TFTs each with the passivation layer of silicon dioxide (SiO<sub<2< (pi)="" (v·s),="" 0.28="" 1.1×10<sup<7<="" 1.5×10<sup<10<="" 1.6="" 10<sup<–11<="" 10<sup<–14<="" 22.4="" 380="" 4.7="" a="" a,="" after="" also="" an="" and="" annealing="" applications="" are="" at="" attributed="" avoid="" avoided;="" back="" bce="" be="" behavior.="" better="" bias="" broad="" by="" channel="" channel.="" channel;="" charged="" cm<sup<2<="" comparing="" comprehensively,="" confirms="" content="" conventional="" could="" current="" decade,="" decreases="" defects="" degradation="" devices="" difference="" diffuse="" diffusion="" direct="" disappearance="" display="" donor="" dramatically="" easily="" effect="" effective="" electrical="" especially="" etchant="" etching="" exist="" explained="" field="" film="" first,="" following="" formation="" from="" greatly,="" h<sub<2<="" harder="" have="" higher="" hydrogen="" hydrogen-related="" i<sub<="" illumination="" improved="" impurities="" impurities,="" impurity="" in="" incorporation="" increases="" indicates="" industry.<="" interstitial="" into="" introduced="" is="" layer="" layer.="" less="" lower="" mechanisms:="" might="" mobility="" more="" negative="" of="" off<="" on-off="" or="" output="" p="" passivation="" performance="" performance,="" pi="" pi,="" polyimide="" positively="" precursor="" process="" promises="" quality="" radicals="" ratio="" rises="" saturation="" sd="" second,="" shallow-level="" shifting="" shows="" sih<sub<4<="" sio<sub<2<="" sites="" specifically,="" stabilities="" stability="" stacked="" states="" structure="" study="" sub<="" sub<),="" sub<-based="" sub<-pi="" sub<o<sub<2<="" substituted="" subthreshold="" sup<="" sup Acta Physica Sinica. 2023 72(8): 087302. Published 2023-04-20</sub<2<>

Effects of Solvent Treatment on the Characteristics of Ingazno Thin-Film Transistors

The effect of various solvents on the back channel of solution-processed In–Ga–Zn–O thin-film transistors intended for biosensor applications

Ingazno Thin-Film Transistors with Back Channel Modification by Organic Self-Assembled Monolayers

Effect of annealing on characteristics of amorphous InGaZnO thin film transistors fabricated by sol-gel technical

Cluster Size Control Toward High Performance Solution Processed InGaZnO Thin Film Transistors

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Enlightenment of Deionized‐Water Bathing IGZO TFTs

Effect of Monoethanolamine Stabilizer on the Solution-Processed InGaZnO Thin-film Transistors

Performance Improvement of Back-Channel-Etched A-Igzo TFTs by O2 Plasma Treatment

Effect of passivation layer on back channel etching InGaZnO thin film transistors

Ultrasonic Treatment-Induced Enhancement of Mechanical and Electrical Properties in InGaZnO Thin-Film Transistors

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF 4 Plasma Treatment

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Improvements in passivation effect of amorphous InGaZnO thin film transistors

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF4 Plasma Treatment

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors