Nondestructive Evaluation of Semiconductors by Photoacoustic Imaging with High-Frequency Air Transducer

ZQ WANG,SY ZHANG,J ZHANG,J HE

DOI: https://doi.org/10.1007/978-1-4615-2958-3_43

1993-01-01

Abstract:The performance of semiconductor devices is related to the chemical components and crystallographic quality of the semiconductor wafers. The control of the dose and uniformity of ion implantation, for example, is critical for good device performance, particularly in MOS Very Large Scale Integrated Circuit (VLSI) manufacturing. The various thermal and mechanical processes during device fabrication can generate imperfections and introduce impurities. The four point probe technique, optical techniques, X ray techniques and other physical techniques have been used to the characterization of semiconductor materials. Photoacoustic(PA) and Photothermal (PT) techniques have been recently developed 1,2 to study the microstructures and defects in ion-implanted semiconductor wafers, in which the crystal structure is perturbed. These techniques, being noncontact, nondestructive and with high spatial resolution, can be used for in-situ monitoring of ion implantation. Using a PA system with air transducer, we studied previously the PA signals as the functions of the ion implantation dose for silicon wafers implanted by boron and phosphorus, before and after annealing.