Abstract:<p>Developing a comprehensive understanding of the modification of material properties by neutron irradiation is important for the design of future fission and fusion power reactors. Self-ion implantation is commonly used to mimic neutron irradiation damage, however an interesting question concerns the effect of ion energy on the resulting damage structures. The reduction in the thickness of the implanted layer as the implantation energy is reduced results in the significant quandary: Does one attempt to match the primary knock-on atom energy produced during neutron irradiation or implant at a much higher energy, such that a thicker damage layer is produced? Here we address this question by measuring the full strain tensor for two ion implantation energies, 2 MeV and 20 MeV in self-ion implanted tungsten, a critical material for the first wall and divertor of fusion reactors. A comparison of 2 MeV and 20 MeV implanted samples is shown to result in similar lattice swelling. Multi-reflection Bragg coherent diffractive imaging (MBCDI) shows that implantation induced strain is in fact heterogeneous at the nanoscale, suggesting that there is a non-uniform distribution of defects, an observation that is not fully captured by micro-beam Laue diffraction. At the surface, MBCDI and high-resolution electron back-scattered diffraction (HR-EBSD) strain measurements agree quite well in terms of this clustering/non-uniformity of the strain distribution. However, MBCDI reveals that the heterogeneity at greater depths in the sample is much larger than at the surface. This combination of techniques provides a powerful method for detailed investigation of the micro structural damage caused by ion bombardment and more generally of strain related phenomena in micro-volumes that are inaccessible via any other technique.</p>

Ion-Implantation Measurements With A Noncontact Nondestructive High-Frequency Photoacoustic Technique

Nondestructive Evaluation of Semiconductors by Photoacoustic Imaging with High-Frequency Air Transducer

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

High-Frequency Photoacoustic Measurements in Air

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Measurement of swelling-induced residual stress in ion implanted SiC, and its effect on micromechanical properties

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Measured and Calculated Retained Dose with Different Process Parameters in Plasma Based Ion Implantation

Photoacoustic Properties of Metal-Insulator-metal Nanostructures

Nanoscale lattice strains in self-ion implanted tungsten

Transmission Electron Microscopy and Spectroscopic Ellipsometry Studies of Damage Layer Induced by Large Tilt Angle Ion Implantation

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface

Investigation of the Doping Profile for Ion Implants and Rapid Annealing in Silicon Via an Improved Method

Piezoelectric Photoacoustic Evaluation of Si Wafers with Buried Structures

Surface characterization of ion-enhanced implanted photoresist removal

The Effect of the Boron-Ions Implantation on the Performance of RADFETs

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

Photoacoustic Effect of Silicon Wafers with a P/n Junction in the Dc Electric Field

Nonlinear Photoacoustic Effect of Semiconductors in Dc Electric-Field