Abstract:During deposition, modification, and etching of thin films and nanomaterials in reactive plasmas, many active species can interact with the sample simultaneously. This includes reactive neutrals formed by fragmentation of the feed gas, positive ions, and electrons generated by electron-impact ionization of the feed gas and fragments, excited states (in particular, long-lived metastable species), and photons produced by spontaneous de-excitation of excited atoms and molecules. Notably, some of these species can be transiently present during the different phases of plasma processing, such as etching of thin layer deposition. To monitor plasma-surface interactions during materials processing, a new system combining beams of neutral atoms, positive ions, UV photons, and a magnetron plasma source has been developed. This system is equipped with a unique ensemble of in-plasma surface characterization tools, including (1) a Rutherford Backscattering Spectrometer (RBS), (2) an Elastic Recoil Detector (ERD), and (3) a Raman spectroscopy system. RBS and ERD analyses are carried out using a differentially pumped 1.7 MV ion beam line Tandetron accelerator generating a beam at grazing incidence. The ERD system is equipped with an absorber and is specifically used to detect H initially bonded to the surface; higher resolution of surface H is also available through nuclear reaction analysis. In parallel, an optical port facing the substrate is used to perform Raman spectroscopy analysis of the samples during plasma processing. This system enables fast monitoring of a few Raman peaks over nine points scattered on a 1.6 × 1.6 mm2 surface without interference from the inherent light emitted by the plasma. Coupled to the various plasma and beam sources, the unique set of in-plasma surface characterization tools detailed in this study can provide unique time-resolved information on the modification induced by plasma. By using the ion beam analysis capability, the atomic concentrations of various elements in the near-surface (e.g., stoichiometry and impurity content) can be monitored in real-time during plasma deposition or etching. On the other hand, the evolution of Raman peaks as a function of plasma processing time can contribute to a better understanding of the role of low-energy ions in defect generation in irradiation-sensitive materials, such as monolayer graphene.

Surface characterization of ion-enhanced implanted photoresist removal

Traceless Mitigation of Laser Damage Precursors on a Fused Silica Surface by Combining Reactive Ion Beam Etching with Dynamic Chemical Etching

Surface Analysis of Photolithographic Patterns Using Tof-Sims and Pca

Energy Dependence of Morphologies on Photoresist Surfaces under Ar+ Ion Bombardment with Normal Incidence

Surface chemistry and damage in the high density plasma etching of gallium arsenide

In-plasma analysis of plasma-surface interactions

Aging Effect on Wettability of Negative Photoresist with Fine-Pitch Micro-Holes after O2 Plasma Treatment

Irradiation simulation of zirconium using high energy argon implantation

Experimental Investigation of Photoresist Etching by Khz AC Atmospheric Pressure Plasma Jet

Ion Radiation Albedo Effect: Influence of Surface Roughness on Ion Implantation and Sputtering of Materials

Ion Incidence Angle-Dependent Pattern Formation on AZ® 4562 Photoresist by Reactive Ion Beam Etching

Mechanism Study of Ion Implantation on Photoresist Shrinkage

Glow discharge-optical emission spectroscopy for in situ analysis of surfaces in plasmas

Competitive and synergistic effects between excimer VUV radiation and O radicals on the etching mechanisms of polyethylene and fluoropolymer surfaces treated by atmospheric He-O$_2$ post-discharge

In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide

The Morphology and Chemistry Evolution of Fused Silica Surface after Ar/CF4 Atmospheric Pressure Plasma Processing

Ion Energy Dependent Initial Damage and Damage Growth in Ar-implanted Fused Silica

Surface analysis of Zircaloy-2 implanted with carbon before and after oxidation in air at 500 °C

Characterization of Fused Silica Surface Topography in Capacitively Coupled Atmospheric Pressure Plasma Processing

Simulation of the Distribution of Incident Ions and Depth Profile in Plasma-Based Ion Implanted Layers with Different Pulse Width

Surface Modifications of PCB-Based Plasma Sources Induced by Atmospheric Plasma: A Comparative Study of Dielectric and Electrode Materials