Piezoelectric Photoacoustic Effect of Semiconductors in DC Electric Fields

yuesheng lu,shuyi zhang
DOI: https://doi.org/10.1007/978-3-540-46972-8_45
1990-01-01
Abstract:In piezoelectric photoacoustic (PA) studies of integrated circuits (IC), we found that the contrast of PA image of some components became much more distinct as an external DC electric field was applied across an IC device [1]. In order to investigate the physical mechanisms of the observed phenomena in PA imaging of active IC devices, according to the transport properties of semiconductors, we present a simplified one-dimensional physical model to calculate the piezoelectric PA signal of silicon wafers with applied DC electric fields. On the other hand, the experimental measurements of piezoelectric PA signal of silicon wafers in the same condition have been done. Both results are in good agreement.
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