Enhancement of Acoustoelectric Interaction in Semiconductors

ZS Wu,XT Sun,CM Gan,H Qin,KJ Chen

DOI: https://doi.org/10.1109/ultsym.1996.584050

1996-01-01

Abstract:The enhancement of acoustoelectric (AE) interaction in semiconductors produced by surface acoustic waves (SAW) is analyzed theoretically and observed experimentally. The illumination of Laser beam onto the crystalized-semiconductor has increased the AE interaction noticeably

What problem does this paper attempt to address?

Acoustoelectric Signals in Semiconductors Generated by Laser Beams

ZS Wu,SW Fu,KJ Cheng,CM Gan,SY Zhang

DOI: https://doi.org/10.1109/ultsym.1995.495701

1995-01-01

Abstract:Acoustoelectric signals in semiconductors induced by a pulsed laser beam are analyzed theoretically and measured experimentally. These signals result from two interactions: photoacoustic in a piezoelectric material illuminated by the laser beam and acoustoelectric in a semiconductor coupled with the piezoelectric body through an air gap
Resonant Acoustooptical Interaction in Superlattices

JJ HE,J SAPRIEL

DOI: https://doi.org/10.1063/1.102041

IF: 4

1989-01-01

Applied Physics Letters

Abstract:The remarkable acousto-optical properties of superlattices for light wavelength near the condition of the Bragg reflection at the interfaces are reported here for the first time. Because of the assistance of a reciprocal lattice vector in the phase-matching condition, the collinear coupling between the light and ultrasonic waves becomes possible in the superlattice. At the same time, the diffraction efficiency is strongly increased by an optical resonance effect in the superlattice. Acousto-optical devices based on semiconductor superlattice structures are proposed, which can be very efficient, rapid, and compact.
Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves

Boqun Dong,Andrei Afanasev,Rolland Johnson,Mona Zaghloul

DOI: https://doi.org/10.3390/s20082419

IF: 3.9

2020-04-24

Sensors

Abstract:We demonstrate that photoemission properties of p-type GaAs can be altered by surface acoustic waves (SAWs) generated on the GaAs surface due to dynamical piezoelectric fields of SAWs. Multiphysics simulations indicate that charge-carrier recombination is greatly reduced, and electron effective lifetime in p-doped GaAs may increase by a factor of 10× to 20×. It implies a significant increase, by a factor of 2× to 3×, of quantum efficiency (QE) for GaAs photoemission applications, like GaAs photocathodes. Conditions of different SAW wavelengths, swept SAW intensities, and varied incident photon energies were investigated. Essential steps in SAW device fabrication on a GaAs substrate are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of current–voltage (I–V) characteristics of the SAW device, and ability to survive high-temperature annealing. Results obtained and reported in this study provide the potential and basis for future studies on building SAW-enhanced photocathodes, as well as other GaAs photoelectric applications.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
Interaction of surface acoustic waves with electronic excitations in graphene

A. Hernández-Mínguez,Y. -T. Liou,P. V. Santos,Y.-T. Liou

DOI: https://doi.org/10.48550/arXiv.1811.00040

2018-10-31

Mesoscale and Nanoscale Physics

Abstract:This article reviews the main theoretical and experimental advances regarding the interaction between surface acoustic waves (SAWs) and electronic excitations in graphene. The coupling of the graphene electron gas to the SAW piezoelectric field can modify the propagation properties of the SAW, and even amplify the intensity of SAWs traveling along the graphene layer. Conversely, the periodic electric and strain fields of the SAW can be used to modify the graphene Dirac cone and to couple light into graphene plasmons. Finally, SAWs can generate acousto-electric currents in graphene. These increase linearly with the SAW frequency and power but, in contrast to conventional currents, they depend non-monotonously on the graphene electric conductivity. Most of these functionalities have been reported in graphene transferred to the surface of strong piezoelectric insulators. The recent observation of acousto-electric currents in epitaxial graphene on SiC opens the way to the large-scale fabrication of graphene-based acousto-electric devices patterned directly on a semi-insulating wafer.
Highly Deep Levels in Solid C70/p-GaAs Structures

GZ Ran,Y Chen,KM Chen,XL Zhang,HG Liu

DOI: https://doi.org/10.7498/aps.53.3498

IF: 0.906

2004-01-01

Acta Physica Sinica

Abstract:An acoustoelectric current is induced by a surface acoustic wave (SAW) launched along the quasionedimensional electron channel defined in a GaAs/Al x Ga 1-x As heterostructure by split gates. Using the WKB approxima tion, the acoust oelectric current is calculated when only one electron is captured in the quantu m well. We discussed the effect on acoustoeletric current caused by SAW power, S AW frequency, gate voltage and sourcedrain bias.
Light interaction with acoustic waves near Bragg incidence in superlattices and related devices

J. Sapriel,J. Yao,J. He,J. Chavignon,R. Planel

DOI: https://doi.org/10.1016/0749-6036(90)90252-3

IF: 3.22

1990-01-01

Superlattices and Microstructures

Abstract:It is shown that superlattice structures undergo strong optical resonances near Bragg incidence, characterized by high energy density gains between the boundaries of the superlattice. These resonances actually correspond to antiresonances of the reflectivity R. The variations of R with the incident wavelength have been investigated with a Ti: sapphire tunable laser source and a good agreement between theory and experiment has been found. Besides, one can take advantage of this resonance to increase the backscattering of light by ultrasonic waves in superlattices, which occurs owing to the assistance of a reciprocal lattice vector.
Enhanced Sound Focusing With Single-Slit Lens

Jian Chen,Mengru Zhang,Yuanliu Chen,Bingfeng Ju,Zheng Fan

DOI: https://doi.org/10.1063/5.0055117

IF: 4

2021-01-01

Applied Physics Letters

Abstract:Sound transmission efficiency and beaming capability are the most important considerations in the design of single-slit lens toward high-performance acoustic imaging and detection. Here, we demonstrated numerically and experimentally enhanced sound focusing through a single subwavelength slit surrounded by grooves on both surfaces. A microscopic coupled-wave model was employed to optimize the slit-groove structure for both transmission enhancement and beam focusing. The simulated and measured results were in good agreement and readily verified the effectiveness of the proposed method in enhancing sound focusing with a single-slit lens. This work paves an alternative avenue for the design of single-slit lens, which may find potential applications in the broad field of acoustics, such as tumor boundary treatment, edge detection, and subwavelength acousto-optic modulation. Published under an exclusive license by AIP Publishing.
Modulation of Brillouin optomechanical interactions via acoustoelectric phonon-electron coupling

Nils T. Otterstrom,Matthew J. Storey,Ryan O. Behunin,Lisa Hackett,Peter T. Rakich,Matt Eichenfield

DOI: https://doi.org/10.48550/arXiv.2111.01020

2021-11-03

Abstract:Optomechanical Brillouin nonlinearities -- arising from the coupling between traveling photons and phonons -- have become the basis for a range of powerful optical signal processing and sensing technologies. The dynamics of such interactions are largely set and limited by the host material's elastic, optical, and photo-elastic properties, which are generally considered intrinsic and static. Here we show for the first time that it is feasible to dynamically reconfigure the Brillouin nonlinear susceptibility in transparent semiconductors through acoustoelectric phonon-electron coupling. Acoustoelectric interactions permit a wide range of tunability of the phonon dissipation rate and velocity, perhaps the most influential parameters in the Brillouin nonlinear susceptibility. We develop a Hamiltonian-based analysis that yields self-consistent dynamical equations and noise coupling, allowing us to explore the physics of such acoustoelectrically enhanced Brillouin (AEB) interactions and show that they give rise to a dramatic enhancement of the performance of Brillouin-based photonic technologies. Moreover, we show that these AEB effects can drive systems into new regimes of fully-coherent scattering that resemble the dynamics of optical parametric processes, dramatically different than the incoherent traditional Brillouin limit. We propose and computationally explore a particular semiconductor heterostructure in which the acoustoelectric interaction arises from a piezoelectric phonon-electron coupling. We find that this system provides the necessary piezoelectric and carrier response ($k^2\approx 6 \%$), favorable semiconductor materials properties, and large optomechanical confinement and coupling ($|g_0|\approx8000$ (rad/s)$\sqrt{\text{m}}$) sufficient to demonstrate these new AEB enhanced optomechanical interactions.

Optics,Applied Physics
Acoustic interactions with semiconductors: progression from inorganic to organic material system

Paromita Bhattacharjee,Himakshi Mishra,Parameswar K. Iyer,Harshal Nemade

DOI: https://doi.org/10.1088/1361-6463/ad5849

2024-06-16

Journal of Physics D Applied Physics

Abstract:This review article presents the insights of acoustic interactions with semiconductors, exploring a continuum from electron dynamics to exciton behaviour while highlighting the recent developments in organic material systems. The various aspects of acoustic interactions, encompassing the manipulation of electrons and their transport mechanisms for applications in the fields of acousto-electric and acoustooptics, explored by studying surface acoustic wave (SAW) devices integrated with inorganic and organic semiconductors, have been presented here. SAWs are guided waves propagating along a piezoelectric material surface, inducing acoustic strain and piezoelectric fields within a semiconductor upon contact. These fields create a dragging force, transferring energy and momentum in the semiconductor, which manipulate and transport charge carriers, thereby generates an acoustoelectric current. Furthermore, SAW can influence exciton dynamics via type-II as well as type-I band edge modulations, leading to alterations in their spatial distribution, causing transport of the electron-hole pairs as distinct charge carrier packets and as bound pairs, respectively, along the SAW path. This paper explores advancements in these phenomenons, shedding light on innovative applications and especially, novel insights into the dynamic interplay between acoustics and organic semiconductor physics. As the review concludes, it outlines challenges and prospects in the field of SAW and semiconductor interactions, providing a roadmap for future research endeavours.

physics, applied
Acoustoelectric Effect due to an In-Depth Inhomogeneous Conductivity Change in ZnO/Fused Silica Substrates

Cinzia Caliendo,Massimiliano Benetti,Domenico CannatÃ,Farouk Laidoudi

DOI: https://doi.org/10.3390/s24196399

IF: 3.9

2024-10-02

Sensors

Abstract:The acoustoelectric (AE) effect induced by the absorption of ultraviolet (UV) light at 365 nm in piezoelectric ZnO films was theoretically and experimentally studied. c-ZnO films 4.0 μm thick were grown by the RF reactive magnetron sputtering technique onto fused silica substrates at 200 °C. A surface acoustic wave (SAW) delay line was fabricated with two split-finger Al interdigital transducers (IDTs) photolithographically implemented onto the ZnO-free surface to excite and reveal the propagation of the fundamental Rayleigh wave and its third harmonic at about 39 and 104 MHz. A small area of a few square millimeters on the surface of the ZnO layer, in between the two IDTs, was illuminated by UV light at different light power values (from about 10 mW up to 1.2 W) through the back surface of the SiO2 substrate, which is optically transparent. The UV absorption caused a change of the ZnO electrical conductivity, which in turn affected the velocity and insertion loss (IL) of the two waves. It was experimentally observed that the phase velocity of the fundamental and third harmonic waves decreased with an increase in the UV power, while the IL vs. UV power behavior differed at large UV power values: the Rayleigh wave underwent a single peak in attenuation, while its third harmonic underwent a further peak. A two-dimensional finite element study was performed to simulate the waves IL and phase velocity vs. the ZnO electrical conductivity, under the assumption that the ZnO layer conductivity undergoes an in-depth inhomogeneous change according to an exponential decay law, with a penetration depth of 325 nm. The theoretical results predicted single- and double-peak IL behavior for the fundamental and harmonic wave due to volume conductivity changes, as opposed to the AE effect induced by surface conductivity changes for which a single-peak IL behavior is expected. The phenomena predicted by the theoretical models were confirmed by the experimental results.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
Nonlinear Photoacoustic Effect of Semiconductors in Dc Electric-Field

JC CHENG,SY ZHANG,YS LU

DOI: https://doi.org/10.1063/1.346273

IF: 2.877

1990-01-01

Journal of Applied Physics

Abstract:The nonlinear piezoelectric photoacoustic (PA) effect of silicon wafers in the applied dc electric field is studied experimentally and theoretically. The apparent nonlinear dependencies of PA amplitude and phase on the laser power are observed in experiments with different dc electric fields. The nonlinearity is explained theoretically by considering the nonlinear surface and bulk Auger recombinations. We present a ‘‘subsurface approximation’’ method to solve the nonlinear transport equation for photogenerated carriers in semi-infinite samples. A good agreement between the experimental results and theoretical predictions is obtained as the incident laser beam with and/or less than medium power.
Piezoelectric Photoacoustic Effect of Semiconductors in DC Electric Fields

yuesheng lu,shuyi zhang

DOI: https://doi.org/10.1007/978-3-540-46972-8_45

1990-01-01

Abstract:In piezoelectric photoacoustic (PA) studies of integrated circuits (IC), we found that the contrast of PA image of some components became much more distinct as an external DC electric field was applied across an IC device [1]. In order to investigate the physical mechanisms of the observed phenomena in PA imaging of active IC devices, according to the transport properties of semiconductors, we present a simplified one-dimensional physical model to calculate the piezoelectric PA signal of silicon wafers with applied DC electric fields. On the other hand, the experimental measurements of piezoelectric PA signal of silicon wafers in the same condition have been done. Both results are in good agreement.
Contactless excitation of acoustic resonance in insulating wafers

Gan Zhai,Yizhou Xin,Cameron J. Kopas,Ella Lachman,Mark Field,Josh Y. Mutus,Katarina Cicak,José Aumentado,Zuhawn Sung,W. P. Halperin

DOI: https://doi.org/10.1063/5.0116478

IF: 4

2022-10-06

Applied Physics Letters

Abstract:Contactless excitation and detection of high harmonic acoustic overtones in a thin insulator single crystal are described using radio frequency spectroscopy techniques. Single crystal [001] silicon wafer samples were investigated, one side covered with a Nb thin film, the common starting point for the fabrication of quantum devices. The coupling between electromagnetic signals and mechanical oscillation is achieved from the Lorentz force generated by an external magnetic field. This method is suitable for any sample with a metallic surface or covered with a thin metal film. High resolution measurements of the temperature dependence of the sound velocity and elastic constants of silicon are reported and compared with known results.

physics, applied
Acousto-optic effects of surface acoustic waves in semiconductor quantum well structures

C. Rocke,A. Wixforth,J.P. Kotthaus,H. Boehm,G. Weimann

DOI: https://doi.org/10.48550/arXiv.cond-mat/9609250

1996-09-27

Abstract:We report on recent experiments investigating the modification of the inter-band optical response of a piezoelectric semiconductor quantum well structure under the influence of intense short period surface acoustic waves. Experimentally, we study the photoluminescence (PL) of an undoped strained InGaAs/GaAs quantum well on which surface acoustic waves are propagated in the GHz regime. We observe a pronounced influence on the PL, both in intensity as well as in energetic position: Above a critical acoustic power density and corresponding lateral piezoelectric field strength, we observe a quenching of the excitons resulting in a strong decrease of the PL intensity. Using two transducers in a cavity resonator geometry, we can create a standing surface acoustic wave and hence control the nature and efficiency of the acoustic transport of the photoexcited electrons and holes.

Condensed Matter
Photoacoustic Effect of Silicon Wafers with a P/n Junction in the Dc Electric Field

Yue-sheng Lu,Shu-yi Zhang,Jian-chun Cheng

DOI: https://doi.org/10.1063/1.347158

IF: 2.877

1990-01-01

Journal of Applied Physics

Abstract:The piezoelectric photoacoustic effect of silicon wafers with a p/n junction in the dc electric field is studied experimentally and theoretically. Based on the transport properties of semiconductors, four kinds of thermal wave sources are considered: (i) instantaneous intraband nonradiative thermalization, (ii) interband nonradiative bulk recombination of photogenerated carriers (PGC), (iii) interband nonradiative surface recombination of PGC, and (iv) instantaneous Joule thermalization of PGC in the applied electric field. The theoretical results are in good agreement with those of experiment. Both show that the contribution of the Joule thermalization is a major factor and the photoacoustic signal will be strengthened as the dc electric field increases beyond an appropriate value. Therefore, the signal-to-noise ratio and the contrast of photoacoustic imaging of the semiconductor devices can be improved by the dc external electric field.
Enhanced Coupling Coefficient in Dual-Mode ZnO/SiC Surface Acoustic Wave Devices with Partially Etched Piezoelectric Layer

Huiping Xu,Sulei Fu,Rongxuan Su,Junyao Shen,Fei Zeng,Cheng Song,Feng Pan

DOI: https://doi.org/10.3390/app11146383

2021-01-01

Abstract:Surface acoustic wave (SAW) devices based on multi-layer structures have been widely used in filters and sensors. The electromechanical coupling factor (K-2), which reflects energy-conversion efficiency, directly determines the bandwidth of the filter and the sensitivity of sensor. In this work, a new configuration of dual-mode (quasi-Rayleigh and quasi-Sezawa) SAW devices on a ZnO/SiC layered structure exhibiting significantly enhanced K-2 was studied using the finite element method (FEM), which features in the partial etching of the piezoelectric film between the adjacent interdigitated electrodes (IDTs). The influences of piezoelectric film thickness, etching ratio, top electrodes, bottom electrodes, and the metallization ratio on the K-2 were systematically investigated. The optimum K-2 for the quasi-Rayleigh mode and quasi-Sezawa mode can exceed 12% and 8%, respectively, which increases by nearly 12 times and 2 times that of the conventional ZnO/SiC structure. Such significantly promoted K-2 is of great benefit for better comprehensive performance of SAW devices. More specifically, a quasi-Rayleigh mode with relatively low acoustic velocity (V-p) can be applied into the miniaturization of SAW devices, while a quasi-Sezawa mode exhibiting a V-p value higher than 5000 m/s is suitable for fabricating SAW devices requiring high frequency and large bandwidth. This novel structure has proposed a viable route for fabricating SAW devices with excellent overall performance.
On-Chip Stimulated Brillouin Scattering via Surface Acoustic Waves

Govert Neijts,Choon Kong Lai,Maren Kramer Riseng,Duk-Yong Choi,Kunlun Yan,David Marpaung,Stephen J. Madden,Benjamin J. Eggleton,Moritz Merklein

2023-10-03

Abstract:Surface acoustic wave (SAW) devices are ubiquitously used for signal processing and filtering, as well as mechanical, chemical and biological sensing, and show promise as quantum transducers. However, nowadays most SAWs are excited and driven via electromechanical coupling and interdigital transducers (IDTs), limiting operation bandwidth and flexibility. Novel ways to coherently excite and detect SAWs all-optically interfaced with photonic integrated circuits are yet elusive. Backward Stimulated Brillouin scattering (SBS) provides strong coherent interactions between optical and acoustic waves in chip-scale waveguides, however, demonstrations have been limited to single longitudinal waves in the waveguide core. Here, we numerically model and experimentally demonstrate surface acoustic wave stimulated Brillouin scattering (SAW-SBS) on a photonic chip. We designed and fabricated tailored waveguides made out of GeAsSe glass that show good overlap between SAWs at 3.81 GHz and guided optical modes, without requiring a top cladding. We measure a 225 W$^{-1}$m$^{-1}$ Brillouin gain coefficient of the surface acoustic resonance and linewidth narrowing to 40 MHz. Experimentally accessing this new regime of stimulated Brillouin scattering opens the door for novel on-chip sensing and signal processing applications, strong Brillouin interactions in materials that do not provide sufficient acoustic guidance in the waveguide core as well as excitation of surface acoustic waves in non-piezoelectric materials.

Optics
Nonlinear Photoacoustic Effect in Semiconductors: Second Harmonic Wave Behavior

J. C. Cheng,S. Y. Zhang,Y. S. Lu,Z. Q. Wang

DOI: https://doi.org/10.1007/978-3-540-47269-8_113

1992-01-01

Abstract:The nonlinear photoacoustic (PA) and photothermal (PT) phenomena have attracted considerable attention in recent years. Balk et al [1] reported the nonlinear effects observed in Scanning Electron Acoustic Microscopy (SEAM), and pointed out that comparing with the fundamental wave imaging, the second harmonic imaging displayed different structures of materials. Wetsel et al [2] investigated the nonlinear phenomena in PhotothermalOptical-Beam-Deflection (POBD) imaging, and presented a nonlinear thermal resistance model. We have studied [3] the nonlinear piezoelectric PA effect of silicon wafers in an applied dc electric field. The dependences of the fundamental frequency PA amplitude and phase on laser power have been measured and explained by considering the nonlinear surface and bulk Auger recombinations of the photogenerated carriers (PGC). Now, both experimental and theoretical investigations on the second harmonic wave behavior of the nonlinear piezoelectric PA effect in semiconductor silicon wafer are reported. The “subsurface approximation” method presented by Cheng et al [3] is extended to calculate a second harmonic component. A good agreement between the experiment and the theory is obtained.
Phononic-Crystal-Based SAW Magnetic-Field Sensors

Mohsen Samadi,Julius Schmalz,Jana Marie Meyer,Fabian Lofink,Martina Gerken

DOI: https://doi.org/10.3390/mi14112130

2023-11-20

Abstract:In this theoretical study, we explore the enhancement of sensing capabilities in surface acoustic wave (SAW)-based magnetic field sensors through the integration of engineered phononic crystals (PnCs). We particularly focus on amplifying the interaction between the SAW and magnetostrictive materials within the PnC structure. Through comprehensive simulations, we demonstrate the synchronization between the SAWs generated by IDTs and the resonant modes of PnCs, thereby leading to an enhancement in sensitivity. Furthermore, we investigate the ΔE effect, highlighting the sensor's responsiveness to changes in external magnetic fields, and quantify its magnetic sensitivity through observable changes in the SAW phase velocity leading to phase shifts at the end of the delay line. Notably, our approach yields a magnetic field sensitivity of approximately S~138 °mT for a delay line length of only 77 µm in homogeneous magnetic fields. Our findings underline the potential of PnCs to advance magnetic field sensing. This research offers insights into the integration of engineered materials for improved sensor performance, paving the way for more effective and accurate magnetic field detection solutions.
Investigation of the Properties of Surface Acoustic Waves in a Lithium Niobate Single Crystal with a Silicon Dioxide Film by the Finite-Element Method

O. L. Balysheva,A. S. Koigerov,B. Ts. Rakshaev

DOI: https://doi.org/10.1134/s1063774523600266

2024-07-26

Crystallography Reports

Abstract:Characteristics of surface acoustic waves in lithium niobate single crystal/silicon dioxide film structures, which are used to increase the thermal stability of acoustoelectric devices on single-crystal substrates, have been calculated. The simulation has been performed by the finite-element method using the COMSOL software, and the velocity, electromechanical coupling coefficient, and temperature coefficient of frequency in the structures with lithium niobate of different cuts have been calculated. A good agreement is observed between the results obtained and the data in the literature. The obtained parameters are of practical importance for developing various acoustoelectric devices.

crystallography

Enhancement of Acoustoelectric Interaction in Semiconductors

Acoustoelectric Signals in Semiconductors Generated by Laser Beams

Resonant Acoustooptical Interaction in Superlattices

Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves

Interaction of surface acoustic waves with electronic excitations in graphene

Highly Deep Levels in Solid C70/p-GaAs Structures

Light interaction with acoustic waves near Bragg incidence in superlattices and related devices

Enhanced Sound Focusing With Single-Slit Lens

Modulation of Brillouin optomechanical interactions via acoustoelectric phonon-electron coupling

Acoustic interactions with semiconductors: progression from inorganic to organic material system

Acoustoelectric Effect due to an In-Depth Inhomogeneous Conductivity Change in ZnO/Fused Silica Substrates

Nonlinear Photoacoustic Effect of Semiconductors in Dc Electric-Field

Piezoelectric Photoacoustic Effect of Semiconductors in DC Electric Fields

Contactless excitation of acoustic resonance in insulating wafers

Acousto-optic effects of surface acoustic waves in semiconductor quantum well structures

Photoacoustic Effect of Silicon Wafers with a P/n Junction in the Dc Electric Field

Enhanced Coupling Coefficient in Dual-Mode ZnO/SiC Surface Acoustic Wave Devices with Partially Etched Piezoelectric Layer

On-Chip Stimulated Brillouin Scattering via Surface Acoustic Waves

Nonlinear Photoacoustic Effect in Semiconductors: Second Harmonic Wave Behavior

Phononic-Crystal-Based SAW Magnetic-Field Sensors

Investigation of the Properties of Surface Acoustic Waves in a Lithium Niobate Single Crystal with a Silicon Dioxide Film by the Finite-Element Method