Nonlinear Photoacoustic Effect in Semiconductors: Second Harmonic Wave Behavior

J. C. Cheng,S. Y. Zhang,Y. S. Lu,Z. Q. Wang
DOI: https://doi.org/10.1007/978-3-540-47269-8_113
1992-01-01
Abstract:The nonlinear photoacoustic (PA) and photothermal (PT) phenomena have attracted considerable attention in recent years. Balk et al [1] reported the nonlinear effects observed in Scanning Electron Acoustic Microscopy (SEAM), and pointed out that comparing with the fundamental wave imaging, the second harmonic imaging displayed different structures of materials. Wetsel et al [2] investigated the nonlinear phenomena in PhotothermalOptical-Beam-Deflection (POBD) imaging, and presented a nonlinear thermal resistance model. We have studied [3] the nonlinear piezoelectric PA effect of silicon wafers in an applied dc electric field. The dependences of the fundamental frequency PA amplitude and phase on laser power have been measured and explained by considering the nonlinear surface and bulk Auger recombinations of the photogenerated carriers (PGC). Now, both experimental and theoretical investigations on the second harmonic wave behavior of the nonlinear piezoelectric PA effect in semiconductor silicon wafer are reported. The “subsurface approximation” method presented by Cheng et al [3] is extended to calculate a second harmonic component. A good agreement between the experiment and the theory is obtained.
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