Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

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Comparative Study on Reliability and Application Features of SiC MOSFET

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

6.5Kv Freedm-Pair: Ideal High Power Switch Capitalizing on Si and Sic

Comparing the State-of-the-Art SiC MOSFETs: Test results reveal characteristics of four major manufacturers? 900-V and 1.2-kV SiC devices

Comparison of 6H-SiC, 3C-SiC, and Si for power devices

Development of 6kv SiC Hybrid Power Switch Based on 1200V SiC JFET and MOSFET

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs

Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

Comparison of 1700-V SiC-MOSFET and Si-IGBT Modules Under Identical Test Setup Conditions

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance

Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs

6.5 Kv Si/SiC Hybrid Power Module: an Ideal Next Step?

Design and Application of High-Voltage SiC JFET and Its Power Modules

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches