Abstract:Despite silicon carbide’s (SiC’s) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes and thyristors, and Schottky contact-based devices operating at high temperatures. The performance and reliability issues unique to SiC discussed here include: (a) MOS channel conductance/gate dielectric reliability trade-off due to lower channel mobility as well as SiC–SiO2 barrier lowering due to interface traps; (b) reduction in breakdown field and increased leakage current due to material defects; and (c) increased leakage current in SiC Schottky devices at high temperatures.Although a natural oxide is considered a significant advantage for realizing power MOSFETs and IGBTs in SiC, devices to date have suffered from poor inversion channel mobility. Furthermore, the high interface state density presently found in the SiC–SiO2 system causes the barrier height between SiC and SiO2 to be reduced, resulting in increased carrier injection in the oxide. A survey of alternative dielectrics shows that most suffer from an even smaller conduction band offset at the SiC–dielectric interface than the corresponding Silicon–dielectric interface and have a lower breakdown field strength than SiO2. Thus, an attractive solution to reduce tunneling such as stacked dielectrics is required.In Schottky-based power devices, the reverse leakage currents are dominated by the Schottky barrier height, which is in the 0.7–1.2eV range. Because the Schottky leakage current increases with temperature, the SiC Schottky devices have a reduction in performance at high temperature similar to that of Silcon PN junction-based devices, and they do not have the high temperature performance benefit associated with the wider bandgap of SiC.Defects in contemporary SiC wafers and epitaxial layers have also been shown to reduce critical breakdown electric field, result in higher leakage currents, and degrade the on-state performance of devices. These defects include micropipes, dislocations, grain boundaries and epitaxial defects. Optical observation of PN diodes undergoing on-state degradation shows a simultaneous formation of mobile and propagating crystal stacking faults. These faults nucleate at grain boundaries and permeate throughout the active area of the device, thus degrading device performance after extended operation.

Comparison of 6H-SiC, 3C-SiC, and Si for power devices

SiC devices: physics and numerical simulation

Comparative Study on Reliability and Application Features of SiC MOSFET

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Comparing the State-of-the-Art SiC MOSFETs: Test results reveal characteristics of four major manufacturers? 900-V and 1.2-kV SiC devices

Comparative Evaluation of 6kv Si and SiC Power Devices for Medium Voltage Power Electronics Applications

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Reliability and performance limitations in SiC power devices

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Recent advances in silicon carbide MOSFET power devices

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Roadmap for SiC power devices

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations