Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems

Comparisons of SiC and Si devices for PMSM drives

Impact of SiC MOSFET on PV Inverter

Comparative Study on Reliability and Application Features of SiC MOSFET

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Interleaved Flyback Micro-inverter with SiC MOSFET

Performance Comparison of Two Hybrid Si/SiC Device Concepts

Comparison of 1700-V SiC-MOSFET and Si-IGBT Modules Under Identical Test Setup Conditions

Sic Mosfet Zero-Voltage-Switching Svm Controlled Three-Phase Grid Inverter

Comprehensive Comparison between Two-Level, Three-Level, and Hybrid Three-Level SiC Inverter for High Power High Speed Drive System

SiC MOSFET Driver and Experiment Analysis

Comparative efficiency analysis for silicon, silicon carbide MOSFETs and IGBT device for DC–DC boost converter

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Comparative Investigation of Surge Current Capabilities of Si IGBT and SiC MOSFET for Pulsed Power Application

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Evaluation of Three Improved Space-Vector-Modulation Strategies for the High-Speed Permanent Magnet Motor Fed by a SiC/Si Hybrid Inverter