Comprehensive Comparison between Two-Level, Three-Level, and Hybrid Three-Level SiC Inverter for High Power High Speed Drive System

Qinsong Wang,Yifan Zhang,Chushan Li,Wuhua Li,Xiangning He
DOI: https://doi.org/10.1109/IPEMC-ECCEAsia48364.2020.9368102
2020-01-01
Abstract:High speed drive system desires power converters with higher switching frequency to minimize the torque ripple and obtain a faster control capability. Silicon carbide (SiC) devices based converters have gained increasing attention in such applications due to their extraordinary switching performance. Possible solutions including two-level converters, three-level converters and hybrid converters comprising both Si and SiC device. In this paper, a comprehensive comparison of possible high density solutions is given. Simple calculations show that an outstanding efficiency can be achieved with the SiC based three-level topologies in the medium switching frequency range. However, the cost of SiC based three-level topologies are still unacceptable. As an alternative, the hybrid three-level inverter can dramatically reduce costs with a little sacrifice on efficiency, which is a more promising choice at this stage.
What problem does this paper attempt to address?