Abstract:This work focuses on the effect of remote phonon arising from the substrate and high-κ gate dielectric on electron mobility in two-dimensional (2D) InSe field-effect transistors (FETs). The electrostatic characteristic under quantum confinement is derived by self-consistently solving the Poisson and Schrödinger equations using the effective mass approximation. Then mobility is calculated by the Kubo–Greenwood formula accounting for the remote phonon scattering (RPS) as well as the intrinsic phonon scatterings, including the acoustic phonon, homopolar phonon, optical phonon scatterings, and Fröhlich interaction. Using the above method, the mobility degradation due to remote phonon is comprehensively explored in single- and dual-gate InSe FETs utilizing SiO2, Al2O3, and HfO2 as gate dielectric respectively. We unveil the origin of temperature, inversion density, and thickness dependence of carrier mobility. Simulations indicate that remote phonon and Fröhlich interaction plays a comparatively major role in determining the electron transport in InSe. Mobility is more severely degraded by remote phonon of HfO2 dielectric than Al2O3 and SiO2 dielectric, which can be effectively insulated by introducing a SiO2 interfacial layer between the high-κ dielectric and InSe. Due to its smaller in-plane and quantization effective masses, mobility begins to increase at higher density as carriers become degenerate, and mobility degradation with a reduced layer number is much stronger in InSe compared with MoS2.

Monte Carlo study of coupled SO phonon-plasmon scattering in Si MOSFETs with high k dielectric gate stacks: hot electron and disorder effects

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Full 3-D Monte Carlo Simulation of Coupled Electron-Phonon Transport: Self-Heating in a Nanoscale FinFET

On The Sub-Nm Eot Scaling Of High-Kappa Gate Stacks

Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack.

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Remote Phonon And Impurity Screening Effect Of Substrate And Gate Dielectric On Electron Dynamics In Single Layer Mos2

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

Characterizing the Charge Trapping Across Crystalline and Amorphous Si/SiO 2 /hfo 2 Stacks from First-Principle Calculations

A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs

Monte Carlo simulations of spin transport in nanoscale In$_{0.7}$Ga$_{0.3}$As transistors: Temperature and size effects

Numerical simulation study on electron mobility of independent DG MOSFETs

Interfacial Phonon Transport Through Si/Ge Multilayer Film Using Monte Carlo Scheme with Spectral Transmissivity

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Coulomb Scattering Induced Mobility Degradation in Ultrathin-body SOI MOSFETs with High-K Gate Stack

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Simulation of "ab Initio" Quantum Confinement Scattering in Utb Mosfets Using Three-Dimensional Ensemble Monte Carlo